Freescale Semiconductor,inc.

Other

Lucent Technologies Inc.

Alcatel-lucent USA Inc.

Alcatel Lucent

Globalfoundries Inc.

Michael D Turner

Ajay Rajkumar

Toni D Van Gompel

Sureshbabu P Nair

Mark Douglas Hall

Lily H Zhu

Rode R Mora

Mohamad M Jahanbani

Sampath Rangarajan

Jian Feng Chen

Harish Viswanathan

Sarit Mukherjee

Brian A Winstead

Konstantin V Loiko

Suman Das

Peretz Moshes Feder

James Edward Vasek

Priya Rajan

Marc Lorelli

Suresh Venkatesan

Colin Leon Kahn

Richard P Ejzak

Robert F Steimle

Vishal P Trivedi

Hartmut Ruelke

Peretz Moshe Feder

Stanley Michael Filipiak

Ruben B Montez

Thien T Nguyen

Kurt H Junker

Laegu Kang

Dharmesh Jawarani

Gregory S Spencer

Peter J Beckage

Peter James McCann

Ritwik Chatterjee

James Paul Seymour

Choh-Fei Yeap

Katja Huy

Philip Lamoureux

Tomas S Young

Yongjoo Jeon

Anand Kagalkar

Jeffrey D Hanna

Thomas John Janiszewski

Kuang-Hsin Chen

Christopher J Rando

A method is provided for triggering migration of call session state information. The method includes determining whether to migrate a network access agent associated with an access terminal in a wireless communication system based on at least one of mobility information associated with the access terminal and status information associated with the wireless communication system.

Triggering migration of a network access agent associated with an access terminal

A method of bonding a cap wafer to a device wafer includes heating the device wafer and the cap wafer in the chamber, cooling the device wafer and the cap wafer in the chamber, pressurizing the chamber, introducing gas into the chamber while the chamber is pressurized to accelerate a rate of one of a group consisting of the heating and the cooling, and applying pressure to the device wafer and the cap wafer while a bond is formed between the device wafer and the cap wafer.

Methods for bonding semiconductor wafers

A mechanism is provided for reducing stiction in a MEMS device by forming a near-uniform silicon carbide layer on silicon surfaces using carbon from TEOS-based silicon oxide sacrificial films used during fabrication. By using the TEOS as a source of carbon to form an antistiction coating, all silicon surfaces can be coated, including those that are difficult to coat using standard self-assembled monolayer (SAM) processes (e.g., locations beneath the proof mass). Controlled processing parameters, such as temperature, length of time for annealing, and the like, provide for a near-uniform silicon carbide coating not provided by previous processes.

Reducing microelectromechanical systems stiction by formation of a silicon carbide layer

A method for making a semiconductor device is provided which includes (a) providing a layer stack comprising a semiconductor layer () and a dielectric layer () disposed between the substrate and the semiconductor layer, (b) creating a trench () which extends through the semiconductor layer and which exposes a portion of the dielectric layer, the trench having a sidewall, (c) creating a spacer structure () which comprises a first material and which is adjacent to the sidewall of the trench, and (d) forming a stressor layer () which comprises a second material and which is disposed on the bottom of the trench.

Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner

To manage resource allocation between users of a wireless or wireline network, recent resource usage by each user is determined and priorities are assigned accordingly. Then, the network resources are allocated according to the assigned priorities. A respective priority of a user may be inversely proportional to the recent resource usage by that user. To facilitate continuous fair distribution of the network resources, the users may be re-prioritized and resources are re-allocated accordingly. Information about recent resource usages by the users is continuously accumulated, including about users moving from one access point of the network to another. When resource allocation for a particular access point is determined, recent resource usage for a user that has joined the access point from another access point in the network may include prior resource usage by that user at the other access point.

Method and apparatus for managing allocation of resources in a network

Wafer-to-wafer thickness uniformity may be improved significantly in a process for depositing a silicon nitride layer in that the flow rate of the reactant and the chamber pressure are varied during a deposition cycle. By correspondingly adapting the flow rate and/or the chamber pressure before and after the actual deposition step, the process conditions may be more effectively stabilized, thereby reducing process variations, even after non-deposition phases of the deposition tool, such as a preceding plasma clean process or an idle period of the tool.

Method of improving the wafer-to-wafer thickness uniformity of silicon nitride layers

Various degradation features are disclosed for a remotely controlled vehicle. Translatable body components are disclosed for simulating damage to a vehicle. Impact sensors may be provided for detecting an impact to the vehicle and modifying operation of the vehicle in response to an impact. A timer may be provided for hampering operations of the vehicle as a function of time for simulating real life conditions. Controls, and methods associated with these features are disclosed as well as games for utilizing the degradation features.

Simulated degradation features for remotely controlled vehicles

A semiconductor process and apparatus provides an encapsulated shallow trench isolation region by forming a silicon nitride layer () to cover a shallow trench isolation region (), depositing a protective dielectric layer () over the silicon nitride layer (), and polishing and densifying the protective dielectric layer () to thereby form a densified silicon nitride encapsulation layer () over the shallow trench isolation region ().

Silicon nitride hardstop encapsulation layer for STI region

An active session mobility solution for point-to-point protocol (PPP) in accordance with the present invention provides fast and smooth handoff by reducing tunneling overhead on tunneling mechanisms, such as P-P tunneling from a serving Source (e.g., a PPP termination device) to a new serving Target (e.g., a PPP termination device). In the active session mobility solution of the present invention, PPP session can be migrated even if not all phases have been completed (e.g., LCP, PAP/CHAP completed but not IPCP and CCP). In such cases, the incomplete phases will be negotiated at the PPP of the Target PPP.

Active session mobility solution for point-to-point protocol

The present invention provides a method of wireless telecommunication in a distributed network comprised of a plurality of access points. The method includes receiving information indicating that a dormant call session is to be activated. The method also includes providing an identifier indicative of the dormant call session. The identifier includes information indicative of an access point having information indicative of a state of the call session stored thereon.

Method and apparatus for activating a dormant mobile unit in a distributed network

An active session mobility solution for radio link protocol (RLP) in accordance with the present invention defines two RLP migrations states. A first state is defined as a forward-link RLP state and depicts the communication of data from a home agent to an access terminal in an IP network. A second state is defined as a reverse-link RLP state and depicts the communication of data from the access terminal to the home agent in the IP network. In one embodiment of the seamless active session mobility solution for RLP in accordance with the present invention, a two-stage RLP transfer process for the migration of the two defined states from a source to a target is implemented. In a first stage, the forward-link RLP state is transferred from a source to a target. In a second stage, frame selection and the reverse-link RLP are transferred from the source to the target.

Active session mobility solution for radio link protocol

A method is provided for creating a barrier layer () on a substrate comprising a dielectric layer () and a metal interconnect (). In accordance with the method, the substrate is treated with a first plasma comprising helium, thereby forming a treated substrate. The treated substrate is then exposed to a second plasma selected from the group consisting of oxidizing plasmas and reducing plasmas. Next, a barrier layer is created on the treated substrate.

Dual plasma treatment barrier film to reduce low-k damage

Growing community of inventors

San Antonio, TX, United States of America

Michael D Turner