Cubicpv Inc.

Hunt Energy Enterprises, LLC

Hee Solar, L.l.c.

Hunt Perovskite Technologies, L.l.c.

Cubic Perovskite LLC

The University of Texas System

Cubivpv Inc.

Michael D Irwin

Vivek V Dhas

Jerred A Chute

Kamil Mielczarek

Nicholas Charles Anderson

Jerome R Lovelace

Michael Holland

Robert Daniel Maher, Iii

Marissa Lynn Higgins

Erin Sanehira

Jerome Lovelace

Mohammad Khaja Nazeeruddin

Zhaofu Fei

Luis A Echegoyen

Danisha M Rivera-Nazario

Minh Tu Nguyen

Xiao-Xin Gao

David W Miller

Valvek V Dhas

A method including forming a lead halide precursor ink comprising a group 1 metal halide, a lead halide, an ionic liquid, and a solvent; depositing the lead halide precursor ink onto a substrate; drying the lead halide precursor ink to form a lead halide film; and annealing the lead halide film.

Ionic liquid perovskite devices

A perovskite material that has a perovskite crystal lattice having a formula of CMX, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof; and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.

Enhanced perovskite materials for photovoltaic devices

A method for preparing photoactive perovskite materials. The method comprises the steps of preparing a lead and tin halide precursor ink. Preparing a lead and tin halide precursor ink comprises the steps of introducing a lead halide and a tin halide into a vessel; introducing a first solvent to the vessel; and contacting the lead halide and the halide with the first solvent to dissolve the lead halide and the tin halide to form the lead and tin halide precursor ink; depositing the lead and tin halide precursor ink onto a substrate; drying the lead and tin halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a solvent comprising: a second solvent; a first salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide; and a second salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

Method of formulating perovskite solar cell materials

A perovskite material that has a perovskite crystal lattice having a formula of CMX, where x, y, and z, are real numbers. Bulky organic cations reside near a surface or a grain boundary of the perovskite crystal lattice. C includes one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, methylammonium, formamidinium, guanidinium, and ethene tetramine. M includes one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X includes one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

A method for solvent-free perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate holder into a deposition chamber, pumping down to a high vacuum pressure, and backfilling the deposition chamber with the vapor of a salt precursor to form a perovskite material.

Method for solvent-free perovskite deposition

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

Multi-junction perovskite material devices

A method for forming a nickel oxide layer is disclosed herein. In some embodiments, a method includes depositing a nickel oxide precursor ink on a substrate, wherein the nickel oxide precursor ink comprises a solvent comprising diols, alcohol amines, and water, Ni(NO)·6HO, and at least one metal acetate selected from the group consisting of Ni(CHCO)·4HO and Cu(CHCO)·1HO, annealing the nickel oxide precursor ink at a temperature between 250° to 400° Celsius for between 10 minutes and 6 hours to form a nickel oxide layer, and cooling the nickel oxide layer.

Nickel oxide sol-gel ink

A method for manufacturing a photovoltaic device. The method comprises fabricating a first photovoltaic device portion with a first photoactive layer having a first face comprising a first perovskite precursor material; fabricating a second photovoltaic device portion with a second photoactive layer having a second face comprising a second perovskite material or a second perovskite precursor material; arranging the first photovoltaic device portion and the second photovoltaic device portion such that the first face is in contact with the second face; and compressing the first photovoltaic device portion and the second photovoltaic device portion at a pressure sufficient to fuse the first perovskite precursor material to the second perovskite material or the second perovskite precursor material.

Perovskite material photovoltaic device and method for assembly

A photovoltaic device comprising a first electrode, a second electrode, an active layer disposed at least partially between the first and second electrodes, an interfacial layer disposed at least partially between the first and second electrodes, and a non-stoichiometric oxide layer disposed at least partially between and in contact with one of the first or second electrodes and an encapsulant layer. The active layer of the photovoltaic device comprises a photoactive material.

Photovoltaic device encapsulation

A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.

Hybrid perovskite material processing

A perovskite material that has a perovskite crystal lattice having a formula of CMX, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.

A method for producing a perovskite material photovoltaic device, the method comprising: depositing a layer comprising a fullerene or fullerene derivative on a perovskite material; depositing a cross-linking agent on the perovskite material or the layer comprising the fullerene or fullerene derivative, wherein the cross-linking agent comprises a silane, wherein the silane is a halosilyalkane; and depositing one or more polymers on the perovskite material or the layer comprising the fullerene or fullerene derivative.

Cross linked surface coating and interfacial layer for a perovskite material photovoltaic device

The performance of photosensitive devices over time may be tested by configuring a photosensitive device test system that includes a light source plate that exposes photosensitive devices within a container to a specified light intensity. The light intensity may be adjusted by a programmable power source according to one or more thresholds. A test may last for a set duration with performance measurements being taken at predetermined intervals throughout the duration. Feedback from the photosensitive device test system may be recorded to determine whether to increase light intensity, to stop testing, to continue testing, and whether one or more environmental conditions should be altered. Measurements may be sent to a client for analysis and display to a user.

System and method for testing photosensitive device degradation

A method for preparing photoactive perovskite materials. The method comprises the steps of preparing a bismuth halide precursor ink. Preparing a bismuth halide precursor ink comprises the steps of introducing a bismuth halide into a vessel; introducing a first solvent to the vessel; and contacting the bismuth halide with the first solvent to dissolve the bismuth halide to form the bismuth halide precursor ink; depositing the bismuth halide precursor ink onto a substrate; drying the bismuth halide precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a solvent comprising: a second solvent; a first salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide; and a second salt selected from the group consisting of methylammonium halide, formamidinimum halide, guanidinium halide, 1,2,2-triaminovinylammonium halide, and 5-aminovaleric acid hydrohalide.

A method for preparing a nickel oxide precursor ink comprising: preparing a solvent comprising diols and alcohol amines; adding nickel nitrate into the solvent to form a nickel nitrate containing solution; adding at least one metal acetate into the nickel nitrate containing solution to form a nickel nitrate and metal acetate containing solution; adding water to the nickel nitrate and metal acetate containing solution to form a nickel oxide precursor mixture; heating the nickel oxide precursor mixture to 60 to 75 Celsius; and cooling the nickel oxide precursor mixture to form the nickel oxide precursor ink.

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Dallas, TX, United States of America

Michael D Irwin