Cree Gmbh

Slt Technologies, Inc.

Michael Coulter

Shuji Nakamura

Steven P DenBaars

Max Batres

Derrick S Kamber

Douglas Wayne Pocius

Pakalapati Tirumala Rajeev

An improved capsule and method of use for processing materials or growing crystals in supercritical fluids is disclosed. The capsule is scalable up to very large volumes and provides for cost-effective processing. In conjunction with suitable high pressure apparatus, the capsule is capable of processing materials at pressures and temperatures of up to approximately 8 GPa and 1500&#xb0; C., respectively.

Capsule for high pressure, high temperature processing of materials and methods of use

A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

Susceptor for MOCVD reactor

The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower having an upper and lower end with the upper end mounted to the top inside surface of the reactor chamber and a susceptor is arranged at the tower's lower end. Semiconductor wafers are held adjacent to the susceptor such that heat from the susceptor passes into wafers. A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower having an upper and lower end. The tower's upper end is mounted to the top inside surface of the reactor chamber. A susceptor is housed within a cup and the cup is mounted to the tower's lower end.

Susceptor apparatus for inverted type MOCVD reactor

A semiconductor fabrication reactor according to the invention comprises a rotatable susceptor mounted to the top of a reactor chamber. One or more wafers are mounted to a surface of the susceptor and the rotation of the susceptor causes the wafers to rotate within the chamber. A heater heats the susceptor and a chamber gas inlet allows semiconductor growth gasses into the reactor chamber to deposit semiconductor material on said wafers. A chamber gas outlet is included to allow growth gasses to exit the chamber. In a preferred embodiment, the inlet is at or below the level of said wafers and the outlet is preferably at or above the level of the wafers. A semiconductor fabrication system according to the invention comprises a source of gasses for forming epitaxial layers on wafers and a source of gasses for dopants in said epitaxial layers. A gas line carries the dopant and epitaxial source gasses to a reactor for growing semiconductor devices on wafers, and the source gasses in the gas line are injected into the reactor chamber through a reactor inlet. The reactor comprises an inverted susceptor mounted in a reactor chamber that is capable of rotating. One or more wafers are mounted to a surface of the susceptor, the rotation of the susceptor causing the wafers to rotate within the chamber. A heater heats the susceptor and the source gasses deposit semiconductor material on the wafers.

Apparatus for inverted multi-wafer MOCVD fabrication

A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

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Santa Barbara, CA, United States of America

Michael Coulter