Friedrich-Alexander-Universitat Erlangen-Nürnberg

Organisation Europeenne Pour La Recherche Nucleaire

Ion Beam Applications S.a.

Czech Technical University in Prague

European Organization for Nuclear Research (Cern)

Cern—european Organization for Nuclear Resesarch

Cern-European Organization for Nuclear Research

European Organization for Nuclear Research

Michael Campbell

Lukas Tlustos

Thilo Michel

Rafael Ballabriga

Winnie Sze-Wing Wong

Gisela Anton

Jan Jakubek

Karl Lehi Schwartz

Ernst Fritsch

Michael Böhnel

Uwe Mollenhauer

Rafael Ballabriga Suñe

Henrious M Heijne

Xavier Llopart-Cudie

Richard Plackett

Henricus M Heijne

Xavier Llopart

Hans-Erik Nilsson

Xavier Llopart Cudie

Karl L Schwartz

Rafael Ballabriga SUÑE

The present invention relates to a pixel detector (), comprising a semiconductor sensor layer (), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer () connected to said semiconductor layer (), said read-out electronics layer () comprising an array of read-out circuits () for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (). The neighboring read-out circuits () are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighboring read-out circuits (). The time difference information is indicative of a difference in the Z-components of the locations of charge generations in the corresponding neighboring sensor volumes caused by a particle trajectory that is inclined with respect to the X-Y-plane.

Single layer 3D tracking semiconductor detector

Radiation detector for measuring one or more characteristics of a radiation, comprising one or more detector pixels, a clock pulse generator, each detector pixel comprising a sensor producing an electrical signal in response to an event of a photon or charged particle of said radiation impinging on said sensor; a pixel electronics adapted for receiving and processing said electrical signal, comprising an analog processing unit for amplifying and shaping said electrical signal and producing a shaped pulse said pixel electronics comprises time determination unit for counting the TOT-count, the TOT-count being the number of clock pulses occurring during the time interval when said shaped pulse is above a threshold. Said pixel electronics comprises a plurality of event counters, each event counter counting the number of events having a TOT-count in a predefined ranges.

Radiation monitoring device

A radiation sensing device subdivided in N*M pixels, comprising: a conversion part to convert an impinging radiation into an electrical signal, a processing part having: for each pixel, at least two counters associated to different regions, so that a ratio of counters to pixels is at least equal to 2, an arbitration circuit which, for each pixel: receives detection information from the pixel and neighbouring pixels, taking into account detection information for the pixel and neighbouring pixels, allocates a detection value to an elected counter.

Pixilated radiation sensing device

A method for determining a particle impact on a sensor device comprising M sensing areas, each impact causing a variation of at least one physical magnitude of several sensing portions, said method comprising the steps of: determining an impact center sensing area, where the variation of the at least one physical magnitude is substantially maximal, allocating a result of a sum of the physical magnitude variations of a first set of N sensing areas, said set including the impact center area and other sensing areas neighboring said impact center sensing area, where N is at least 2 and is strict less than M.

Method for determining a particle and sensor device therefor

Growing community of inventors

Geneva, Switzerland

Michael Campbell