Usf Filtration & Separations Group Inc.

Applicote Associates LLC

Other

Usf Filtration and Seperations Group, Inc.

Michael C Murray

Nathaniel R Quick

Clinton V Kopp

Michael Liberman

Alexander Sobolevsky

A method is disclosed for doping a semiconductor material comprising the steps of providing a semiconductor material having a first and a second surface. A dopant precursor is applied on the first surface of the semiconductor material. A thermal energy beam is directed onto the second surface of the semiconductor material to pass through the semiconductor material and impinge upon the dopant precursor to dope the semiconductor material thereby.

Thermal doping of materials

A method and apparatus is disclosed for doping a semiconductor substrate with a dopant concentration greater than 10atoms per cubic centimeter. The method is suitable for producing an improved doped wide bandgap wafer for power electronic devices, photo conductive semiconductor switch, or a semiconductor catalyst.

Ultra-high pressure doping of materials

An apparatus and a method are disclosed for forming electrical conductors and/or semiconductors on a glass substrate. The electrical conductors and/or semiconductors are formed by applying a conducting material or a semiconductor material to a surface of the glass substrate and irradiating the interface with a focused laser beam transmitted through the glass. An electrical conductor may be formed on a glass substrate or a semiconductor substrate to provide an electrical antenna for radio frequency communication.

Methods of forming conductors and semiconductors on a substrate

An apparatus and process for making a capacitor comprising a first capacitor plate element covered with a spacing material selected for forming a capacitor dielectric. The first capacitor plate element and the spacing material is encased with a second capacitor element. The second capacitor plate element is drawn for reducing the outer diameter thereof. A multiplicity of the capacitor elements are inserted within a second capacitor plate connector. The second capacitor plate connector is drawn for reducing the outer diameter of the metallic tube and for electrically interconnecting the multiplicity of the second capacitor plate elements with the second capacitor plate connector to form a second capacitor plate. The multiplicity of the first capacitor elements are interconnected with a first capacitor plate connector to form a first capacitor plate. The spacing material is replaced with a dielectric material to form the capacitor thereby.

Capacitor

Process for extracting copper or iron

An apparatus and process for making a capacitor having a first capacitor plate element covered with a spacing material selected for forming a capacitor dielectric. The first capacitor plate element and the spacing material is encased with a second capacitor element. The second capacitor plate element is drawn for reducing the outer diameter thereof. A multiplicity of the capacitor elements are inserted within a second capacitor plate connector. The second capacitor plate connector is drawn for reducing the outer diameter of the metallic tube and for electrically interconnecting the multiplicity of the second capacitor plate elements with the second capacitor plate connector to form a second capacitor plate. The multiplicity of the first capacitor elements are interconnected with a first capacitor plate connector to form a first capacitor plate. The spacing material is replaced with a dielectric material to form the capacitor thereby.

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Eustis, FL, United States of America

Michael C Murray