Leland Stanford Junior University

Honda Patents & Technologies North America, LLC

Samsung Electronics Co., Ltd.

Michael C Langston

Friedrich B Prinz

Andrei Teodor Iancu

Takane Usui

Timothy P Holme

Neil Dasgupta

Hitoshi Iwadate

Munekazu Motoyama

Cheng-Chieh Chao

Hee Joon Jung

Ki-Hyun Kim

Stephen P Walch

Peter Schindler

Sam Hyung Sam Kim

Provided is a method of forming a thin film of a semiconductor device. The method includes forming a precursor layer on a surface of a substrate by supplying a precursor gas into a chamber, discharging the precursor gas remaining in the chamber to an outside of the chamber by supplying a purge gas into the chamber, supplying a reactant gas into the chamber, generating plasma based on the reactant gas, forming a thin film by a chemical reaction between plasma and the precursor layer and radiating extreme ultraviolet (EUV) light into the chamber, and discharging the reactant gas and the plasma remaining in the chamber by supplying a purge gas into the chamber.

Method of forming thin film of semiconductor device

A method of fabricating quantum confinements is provided. The method includes depositing, using a deposition apparatus, a material layer on a substrate, where the depositing includes irradiating the layer, before a cycle, during a cycle, and/or after a cycle of the deposition to alter nucleation of quantum confinements in the material layer to control a size and/or a shape of the quantum confinements. The quantum confinements can include quantum wells, nanowires, or quantum dots. The irradiation can be in-situ or ex-situ with respect to the deposition apparatus. The irradiation can include irradiation by photons, electrons, or ions. The deposition is can include atomic layer deposition, chemical vapor deposition, MOCVD, molecular beam epitaxy, evaporation, sputtering, or pulsed-laser deposition.

Irradiation assisted nucleation of quantum confinements by atomic layer deposition

Growing community of inventors

Los Altos Hills, CA, United States of America

Michael C Langston