Applied Materials, Inc.

Michael C Kutney

Zhaozhao Zhu

Blake Erickson

Upendra V Ummethala

James D Carducci

Andrew Nguyen

Daniel John Hoffman

Keith R Berding

Ajit Balakrishna

Steven Trey Tindel

Prashanth Kumar

Kallol Bera

Yan Ye

Michael D Willwerth

Michael N Grimbergen

Chunlei Zhang

Matthew L Miller

Douglas Buchberger

Lei Lian

Roger Alan Lindley

Pengyu Han

Michelle SanPedro

Soumendra N Barman

Jeffrey Ludwig

John Anthony O'Malley

Tsung Feng Wu

Douglas A Buchberger, Jr

Ashok K Sinha

Arvind Sundarrajan

Keiji Horioka

Guan Huei See

Shawming Ma

Fei C Wang

Robert Z Bachrach

Steven C Shannon

Connie P Wang

Martin Jeffrey Salinas

Hamid Tavassoli

Gerardo Delgadino

Ezra Robert Gold

Glen T Mori

Kin Pong Lo

Xiaoye Zhao

Siqing Lu

Douglas H Burns

Ashley M Okada

Chih Chung Chou

Prayudi Lianto

Hooman Bolandi

Gregory John Freeman

Victor Pebenito

Ozkan Celik

Patricia A Schulze

Joseph G Gordon

Arunkumar Ramachandraiah

Gaurav Mehta

Pin Gian Gan

Amulya Ligorio Athayde

Ramesh Chidambaram

Suresh Polali Narayana Rao

Ricardo Fujii Vinluan

Wei Hao Kew

Muhammad Adli Danish Bin Abdullah

Mark McTaggart Wylie

Sik Hin Chi

Shih-Chao Hung

An apparatus includes a base component and a plurality of collimators housed within the base component. Each collimator of the plurality of collimators corresponds to a respective location of a plurality of locations of a wafer in an etch chamber. The plurality of locations includes a center location of the wafer, a plurality of inner ring locations along an inner ring of the wafer associated with a first set of radially symmetric optical emission spectroscopy (OES) signal sampling paths, and a plurality of outer ring locations along an outer ring of the wafer associated with a second set of radially symmetric OES signal sampling paths.

Spatial optical emission spectroscopy for etch uniformity

A method includes processing a substrate in a process chamber according to a recipe, wherein the substrate comprises at least one of a film or a feature after the processing. The method further includes generating a profile map of the first substrate. The method further includes processing data from the profile map using a first model, wherein the first model outputs at least one of an estimated mesa condition of a substrate support for the process chamber, an estimated lift pin location condition of the substrate support an estimated seal band condition of the substrate support, or an estimated process kit ring condition for a process kit ring for the process chamber. The method further includes outputting a notice as a result of the processing.

Estimation of chamber component conditions using substrate measurements

A method for a substrate measurement subsystem is provided. An indication is received that a substrate being processed at a manufacturing system has been loaded into a substrate measurement subsystem. First positional data of the substrate within the substrate measurement subsystem is determined. One or more portions of the substrate to be measured by one or more sensing components of the substrate measurement subsystem are determined based on the first positional data of the substrate and a process recipe for the substrate. Measurements of each of the determined portions of the substrate are obtained by one or more sensing components of the substrate measurement subsystem. The obtained measurements of each of the determined portions of the substrate are transmitted to a system controller.

Substrate measurement subsystem

A substrate processing system includes a process chamber, one or more robot, a substrate measurement system, and a computing device. The process chamber may process a substrate that will comprise a film and/or feature after the processing. The one or more robot, to move the substrate from the process chamber to a substrate measurement system. The substrate measurement system may measure the film and/or feature on the substrate and generate a profile map of the film and/or feature. The computing device may process data from the profile map using a first trained machine learning model, wherein the first trained machine learning model outputs a first chamber component condition estimation for a first chamber component of the process chamber. The computing device may then determine whether to perform maintenance on the first chamber component of the process chamber based at least in part on the first chamber component condition estimation.

Chamber component condition estimation using substrate measurements

A process recipe associated with a substrate at a manufacturing system is identified. A first set of measurements for the substrate is obtained from a substrate measurement subsystem. A second set of measurements for the substrate is obtained from one or more sensors of a chamber of the manufacturing system. A determination is made based on the obtained first set of measurements and the obtained second set of measurements of whether to modify the process recipe by at least one of modifying an operation of the process recipe or generating an instruction to prevent completion of execution of one or more operations of the process recipe.

Integrated substrate measurement system to improve manufacturing process performance

An apparatus includes a substrate holder, a first actuator to rotate the substrate holder, a second actuator to move the substrate holder linearly, a first sensor to generate one or more first measurements or images of the substrate, a second sensor to generate one or more second measurements of target positions on the substrate, and a processing device. The processing device estimates a position of the substrate on the substrate holder and causes the first actuator to rotate the substrate holder about a first axis. The rotation causes an offset between a field of view of the second sensor and a target position on the substrate due to the substrate not being centered on the substrate holder. The processing device causes the second actuator to move the substrate holder linearly along a second axis to correct the offset. The processing device determines a profile across a surface of the substrate based on the one or more second measurements of the target positions.

Integrated substrate measurement system

Implementations disclosed describe a collimator assembly having a collimator housing that includes an interface configured to optically couple to a process chamber that has a target surface, and a port to receive an optical fiber to deliver, to an enclosure formed by the collimator housing, a first (second) plurality of spectral components of light belonging to a first (second) range of wavelengths, and an achromatic lens located, at least partially, within the enclosure formed by the collimator housing, the achromatic lens to direct the first (second) plurality of spectral components of light onto the target surface to illuminate a first (second) region on the target surface, wherein the second region is substantially the same as the first region.

Adjustable achromatic collimator assembly for endpoint detection systems

A system includes a memory, and at least one processing device, operatively coupled to the memory, to facilitate an etch recipe development process by performing operations including obtaining, from an optical detector, first material thickness data for a first material and second material thickness data for a second material resulting from an iteration of an etch process using an etch recipe. The first material is located at a first reflectometry measurement point and the second material is located at a second reflectometry measurement point different from the first reflectometry measurement point. The operations further include determining one or more etch parameters based on at least the first material thickness data and the second material thickness data.

Multiple reflectometry for measuring etch parameters

A method for determining whether to modify a manufacturing process recipe is provided. A substrate to be processed at a manufacturing system according to the first process recipe is identified. An instruction to transfer the substrate to a substrate measurement subsystem to obtain a first set of measurements for the substrate is generated. The first set of measurements for the substrate is received from the substrate measurement subsystem. An instruction to transfer the substrate from the substrate measurement subsystem to a processing chamber is generated. A second set of measurements for the substrate is received from one or more sensors of the processing chamber. A first mapping between the first set of measurements and the second set of measurements for the substrate is generated. The first set of measurements mapped to the second set of measurements for the substrate is stored. A determination is made based on the first set of measurements mapped to the second set of measurements for the substrate of whether to modify the first process recipe or a second process recipe for the substrate.

An apparatus includes a base component and collimators housed within the base component. The collimators correspond to collection cylinders for sampling optical emission spectroscopy (OES) signals with respect to locations of a wafer in an etch chamber. The apparatus further includes a guide, operatively coupled to the plurality of collimators, to guide the sampling of the OES signals along paths for sampling the OES signals.

A system includes a memory and at least one processing device operatively coupled to the memory to facilitate an etch recipe development process by performing a number of operations. The operations include receiving a request to initiate an iteration of an etch process using an etch recipe to etch a plurality of materials each located at a respective one of a plurality of reflectometry measurement points, obtaining material thickness data for each of the plurality of materials resulting from the iteration of the etch process, and determining one or more etch parameters based on the material thickness data.

Portion of a display panel with a graphical user interface

Methods and apparatus perform backside via reveal processes using a centralized control framework for multiple process tools. In some embodiments, a method for performing a backside via reveal process may include receiving process tool operational parameters from process tools involved in the backside via reveal process by a central controller, receiving sensor metrology data from at least one or more of the process tools involved in the backside via reveal process, and altering the backside reveal process based, at least in part, on the process tool operational parameters and the sensor metrology data by adjusting two or more of the process tools involved in the backside via reveal process. The profile parameters are configured to prevent backside via breakage during a chemical mechanical polishing (CMP) process.

Methods and apparatus for backside via reveal processing

Methods and apparatus for a flow ratio controller are provided herein. In some embodiments, a flow ratio controller includes an inlet; a plurality of channels extending from the inlet to a corresponding plurality of outlets; a bypass pipe extending from each channel of the plurality of channels that diverts a small portion of a flow from that channel and then returns the small portion of the flow back to that channel; and a thermal mass flow meter coupled to the bypass pipe having a first temperature sensor, a second temperature sensor, and a heating element disposed therebetween. A controller is configured to determine a flow rate through each of the plurality of channels based on a measured temperature difference between the first temperature sensor and the second temperature sensor.

Low temperature thermal flow ratio controller

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Santa Clara, CA, United States of America

Michael C Kutney