Western Digital Technologies, Inc.

Michael C Kutas

Scott E Burton

Choo-Bhin Ong

Chandra M Guda

Lu Ding

Lifetime extension of a non-volatile semiconductor memory (NVSM) for a data storage device (DSD) includes determining a write amplification factor based on an amount of data previously written to the NVSM and at least one of an amount of data previously requested to be written to the DSD, and an amount of data previously requested to be written to the NVSM. At least a portion of the amount of data to be written to the NVSM is directed or redirected to the disk based on the determined write amplification factor.

Lifetime extension of non-volatile semiconductor memory for data storage device

A data storage device is disclosed including a non-volatile memory comprising a plurality of memory segments. The LBAs of a read command are mapped to PBAs addressing the memory segments. At least two seed values corresponding to two of the LBAs are generated and stored in an array. The array is then indexed to access the seed value corresponding to each LBA, wherein the seed value is used to seed an error code generator.

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Irvine, CA, United States of America

Michael C Kutas