Seagate Technology Incorporated

Saegate Technology LLC

Michael C Kautzky

Tong Zhao

Michael Allen Seigler

Xiaoyue Huang

Sarbeswar Sahoo

Yuhang Cheng

Jie Gong

Justin Glen Brons

Martin Giles Blaber

Venkateswara R Inturi

Scott Michael Franzen

Sethuraman Jayashankar

Steven Carl Riemer

Kurt W Wierman

Mark Ostrowski

Ed F Rejda

William Albert Challener

John Charles Duda

Dimitar Velikov Dimitrov

YongJun Zhao

Steve C Riemer

Kaizhong Gao

Mark Thomas Kief

Jie Zou

Li Wan

Meng Zhu

Song Sheng Xue

Declan Macken

James Gary Wessel

Amit Vasant Itagi

Ibro Tabakovic

Hui Brickner

Wei Tian

Daniel Paul Burbank

Mallika Kamarajugadda

John A Rice

Seung-Yeul Yang

Huaqing Yin

Patrick Joseph Ryan

Paul E Anderson

John Stuart Wright

Andrew Joseph Boyne

David Chris Seets

Xuefei Tang

Charles Everett Hawkinson

Xiaolu Kou

Mark Anthony Gubbins

Roger Lee Hipwell, Jr

Werner Scholz

Jason Bryce Gadbois

Marcus Benedict Mooney

Ladislav Rudolf Pust

Thomas Roy Boonstra

Neil Zuckerman

Edwin F Rejda

Michael James Hardy

Venkatram Venkatasamy

Francis A McGinnity

Sunita B Gangopadhyay

Vladyslav Alexandrovich Vas'ko

Yifan Zhang

David Michael Grundman

Xuelian Xu

Vijay Karthik Sankar

Zhihong Lu

Lance Edward Nevala

Hilton Erskine

Edward Charles Gage

Eric Walter Singleton

Xuhui Jin

Mark William Covington

Jianhua Xue

Zoran Jandric

Joel William Hoehn

Tae-Woo Lee

Qing I He

Weibin Chen

Dian Song

Scott Eugene Olson

Jorge Vicente Hanchi

Brian William Karr

Eric Leroy Granstrom

David James Ellison

Richard P Michel

Manuel Charles Anaya-Dufresne

Nils Jan Gokemeijer

Johannes Van Ek

Roger L Hipwell

Martin Louis Plumer

Nan Zhou

Jeremy Adam Thurn

Christopher Loren Platt

Lijuan Zou

David James Larson

Jumna P Ramdular

Yi-Kuei Ryan Wu

William Paul Vavra

Mei-Ling Wu

Bradley Hugh Miller

I-Fei Tsu

Described are electrodeposition methods, and materials and structures prepared by electrodeposition methods, and devices prepared from the electrodeposited materials.

Electrodeposited materials and related methods

A method involves forming a metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. A surface of the metal layer defines a first metal bonding layer. A second metal bonding layer is provided on a target substrate having recording head subassemblies. Mating surfaces of the first and second metal bonding layers are activated and the carrier wafer is flipped and joined with the target substrate such that the first and second metal bonding layers are bonded and the metal layer is integrated with the recording head as a near-field transducer.

Single-grain near-field transducer and process for forming same

A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2<T1, resulting in a layer of the template material with thickness T1−T2. The ion beam milling is performed at a channeling angle relative to a deposition plane of the wafer, the channeling angle defined relative to a channeling direction of a crystalline microstructure of the template material. After the repetitions, additional material is deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

Thin-film crystalline structure with surfaces having selected plane orientations

A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

A data storage device comprising a recording head having a high damping magnetic alloy layer including at least one magnetic alloy element, and a 5d transition element; the high damping magnetic alloy layer having a mixed face-centered cubic (fcc) and body-centered cubic (bcc) crystal structure, and the mixed fcc and bcc crystal structure comprising fcc and bcc grains, with the bcc grains having an elongated shape relative to the fcc grains, a larger size than the fcc grains, and slip deformation, thereby providing the high damping magnetic alloy layer with a damping constant of up to about 0.07.

Electrodeposition of high damping magnetic alloys

A heat-assisted magnetic recording head includes a first feature, a second feature, and a bilayer adhesion structure. The first feature includes a first primary metal. The second feature includes an oxide region, and a mixed metal oxide adhesion layer that is adhered to the oxide region and provided on a surface of the second feature. The bilayer adhesion structure includes the mixed metal oxide adhesion layer of the second feature, and a metal adhesion layer. The metal adhesion layer is disposed between and adhered to the first feature and the mixed metal oxide adhesion layer of the second feature. The metal adhesion layer includes a second primary metal that is different than the first primary metal.

Heat-assisted magnetic recording head with a bilayer adhesion structure

A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a thermally stable soft magnetic material. The method also includes applying a combined stepped and pulsed current to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the thermally stable soft magnetic material is formed on the wafer.

Electrodeposition of thermally stable alloys

A hard disk drive (HDD) includes a heat-assisted magnetic recording (HAMR) head. The HAMR head includes one or more features comprising a nanoparticle-reinforced plasmonic matrix. The nanoparticle-reinforced plasmonic matrix comprises a plasmonic metal and a plurality of nanoparticles dispersed in the plasmonic metal. The nanoparticles comprise a transparent conductive oxide.

Heat-assisted magnetic recording head with nanoparticles

A recording head has a near-field transducer proximate a media-facing surface of the recording head. A waveguide overlaps and delivers light to the near-field transducer. Two subwavelength focusing mirrors are at an end of the waveguide proximate the media-facing surface. The subwavelength mirrors are on opposite crosstrack sides of the near-field transducer and separated from each other by a crosstrack gap. The subwavelength focusing mirrors each include a core having a first edge exposed at the media-facing surface. The core formed of a core material that is resistant to mechanical wear and corrosion, such as a dielectric or robust metal. A liner covers a second edge of the core facing the near-field transducer. The liner includes a plasmonic metal that is different than the core material, such as Au or Al.

Heat-assisted recording head having mechanically robust subwavelength mirror with plasmonic liner

A near-field transducer or heat sink is formed via a first process. The near-field transducer or heat sink is transfer-printed to a read/write head via a second process.

Transfer-printed near-field transducer and heat sink

A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.

Processing for forming single-grain near-field transducer

A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy with very low impurity and small uniform grain size. The method also includes applying a pulsed current with a certain range of duty cycle and pulse length to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the high damping magnetic alloy is formed on the wafer.

A thin film structure (e.g., a near-field transducer), includes a first surface parallel to a substrate on which the thin film structure is deposited and two other surfaces orthogonal to the first surface. The first surface and the two other surfaces have respective first, second, and third selected plane orientations with respective first, second, and third atomic packing factors. The first, second, and third selected plane orientations are selected to maximize an average of the first, second, and third atomic packing factors.

Methods of forming a near field transducer (NFT), the methods including the steps of depositing plasmonic material on a substrate; laser annealing at least a portion of the deposited plasmonic material at a wavelength from 100 nm to 2.0 micrometers (&#x3bc;m) to induce liquid phase epitaxy (LPE) in the annealed deposited plasmonic material to form a epitaxially modified plasmonic material; and forming a NFT from at least a portion of the epitaxially modified plasmonic material are disclosed as well as other methods and devices such as those formed.

Methods of forming materials

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Eagan, MN, United States of America

Michael C Kautzky