Sunpower Corporation

Maxeon Solar Pte. Ltd.

Total Marketing Services

Michael C Johnson

Yu-Chen Shen

David D Smith

Seung Bum Rim

Peter John Cousins

Richard M Swanson

Tim Dennis

Marius M Bunea

Taiqing Qiu

Kieran Mark Tracy

Xiuwen Tu

David Aitan Soltz

Staffan Westerberg

Périne Jaffrennou

Gilles Olav Tanguy Sylvain Poulain

Michael Cudzinovic

Joseph Frederick Behnke

Junbo Wu

Xi Zhu

Jara Fernandez Martin

Julien Penaud

Richard Sewell Hamilton

Perine Jaffrenou

Princess Carmi Tomada

Mohamed Hashi

John Royal

Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.

UV-curing of light receiving surfaces of solar cells

Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Solar cell having an emitter region with wide bandgap semiconductor material

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.

Solar cells with differentiated p-type and n-type region architectures

Solar cells with differentiated P-type and N-type region architectures

UV-curing of light-receiving surfaces of solar cells

Methods of fabricating solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a thin dielectric layer on a surface of a substrate by radical oxidation or plasma oxidation of the surface of the substrate. The method also involves forming a silicon layer over the thin dielectric layer. The method also involves forming a plurality of emitter regions from the silicon layer.

Deposition approaches for emitter layers of solar cells

Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

Photonic degradation monitoring for semiconductor devices

Methods of passivating light-receiving surfaces of solar cells with high energy gap (Eg) materials, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A Group III-nitride material layer is disposed above the passivating dielectric layer. In another example, a solar cell includes a substrate having a light-receiving surface. A passivating dielectric layer is disposed on the light-receiving surface of the substrate. A large direct band gap material layer is disposed above the passivating dielectric layer, the large direct band gap material layer having an energy gap (Eg) of at least approximately 3.3. An anti-reflective coating (ARC) layer disposed on the large direct band gap material layer, the ARC layer comprising a material different from the large direct band gap material layer.

Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials

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Alameda, CA, United States of America

Michael C Johnson