Advanced Micro Devices Corporation

Michael C Braganza

Victor F Andrade

Randal L Posey

Stephen Victor Kosonocky

Jerry D Moench

Spencer Montgomery Gold

Michael K Ciraula

Floyd L Dankert

Karthik Natarajan

Michael Bienek

Alexander W Schaefer

Ravi T Jotwani

Amy M Novak

Giridhar Narayanaswami

Soolin Kao Chrudimsky

Jan Michael Huber

Achieving better uniformity of temperature on an integrated circuit while performing burn-in can result in reduced burn-in time and more uniform acceleration. One way to achieve better temperature uniformity is to control dynamic power in the core and cache by operating at different frequencies and increasing switching activity in the cache(s) during burn-in by changing operation of the cache so that during burn-in a plurality of memory locations in the cache(s) are accessed simultaneously, thereby increasing activity in the cache to achieve higher power utilization in the cache during burn-in.

Method and apparatus to achieve more level thermal gradient

A circuit including is disclosed. The circuit includes a precharge circuit configured to pull a dynamic node toward a voltage present on the voltage supply node during a precharge phase, and an evaluation circuit configured to, during an evaluation phase, pull the dynamic node toward a ground voltage responsive to a first input condition and configured to inhibit pulling of the dynamic node down responsive to a second input condition. A pull-up circuit coupled between the first dynamic node and the voltage supply node includes first and second pull-up transistors. The first pull-up transistor is configured to activate responsive to the precharge phase. The second pull-up transistor is configured to activate at a delay time subsequent to entry of the evaluation phase. When the first and second pull-up transistors are active, a pull-up path is provided between the dynamic node and the voltage supply node.

Dynamic logic circuit with device to prevent contention between pull-up and pull-down device

A circuit for implementing memory arrays using a global bitline domino read/write scheme. The memory circuit includes a plurality of cells each configured to store a bit of data. The memory circuit further includes a plurality of local bitlines, wherein each cells is coupled to one of the local bitlines. Each of the plurality of local bitlines is a differential bitline having a signal path and a complementary signal path which are cross-coupled by a pair of transistors.

Memory array with global bitline domino read/write scheme

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Austin, TX, United States of America

Michael C Braganza