Agere Systems Inc.

Michael C Ayukawa

Seung Hyuk Kang

Sailesh Mansinh Merchant

Kurt George Steiner

Taeho Kook

Mark Adam Bachman

Daniel Patrick Chesire

Vance D Archer, Iii

Roland P Krebs

The present invention provides a solder bump structure. In one aspect, the solder bump structure is utilized in a semiconductor device, such as an integrated circuit. The semiconductor device comprises active devices located over a semiconductor substrate, interconnect layers comprising copper formed over the active devices, and an outermost metallization layer positioned over the interconnect layers. The outermost metallization layer comprises aluminum and includes at least one bond pad and at least one interconnect runner each electrically connected to an interconnect layer. An under bump metallization layer (UBM) is located over the bond pad, and a solder bump is located over the UBM.

Routing under bond pad for the replacement of an interconnect layer

An integrated circuit device structure and a process for fabricating the structure wherein the power bus interconnect structure is formed in the aluminum pad or contact layer. An interconnect structure for interconnecting underlying levels of interconnect can also be formed in the aluminum pad layer.

Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures

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Ecublens, Switzerland

Michael C Ayukawa