Koninklijke Philips Corporation N.v.

Polymer Vision Limited

Philips Intellectual Property & Standards Gmbh

Michael Buechel

Dagobert Michel De Leeuw

Edward Willem Albert Young

Eduard Johannes Meijer

Georg Greuel

Peter Van De Weijer

Sepas Setayesh

Edward W A Young

Wilhelmus Peter Martinus Nijssen

Boudewijn Johannes Catharinus Jacobs

Thomas Dimitriou Anthopoulos

Margaretha Maria De Kok Van Breemen

Thomas Juestel

Soeren Hartmann

Thomas D Anthopoulos

Wilhelmus P M Nijssen

An electro-optically active organic diode, for example an organic light emitting diode (OLED), comprises an anode electrode (), a cathode electrode () and an electro-optically active organic layer () arranged in-between. A cover layer () is arranged in contact with a surface of the cathode layer () so that the cathode layer () is positioned between the organic layer () and the cover layer (), which is formed of a substantially inert material with respect to a cathode layer () material in contact with said cover layer (). The inert material is deposited on said surface of the cathode layer () so that the complete surface is covered and surface defects eliminated. A short protection layer () is further arranged between said cathode electrode () and said electro-optically active organic layer (), and adjacent to said cathode electrode (), and is formed of an inorganic semiconductor material. The cover layer () and the short protection layer () together reduce the risk of shorts to occur between the cathode () and the anode () and thus increase reliability of the electro-optically active organic diode.

Electro-optically active organic diode with short protection

A stacked electro-optically active organic diode has an anode electrode (), a cathode electrode (), a first electro-optically active organic layer () arranged between the electrodes (), and a second electro-optically active organic layer () arranged between said first active organic layer () and said cathode (). A low electron affinity layer () is arranged between the first electro-optically active organic layer () and the second electro-optically active organic layer (), and is formed of a first transparent inorganic semi-conductor material. A high electron affinity layer () is arranged between said second electro-optically active organic layer () and the low electron affinity layer (), and is formed of a second transparent inorganic semiconductor material, wherein said second transparent inorganic semiconductor material has a higher electron affinity than said first inorganic semiconductor material. The low and high affinity layers () constitute a connection layer of only two semiconductor (sub-)layers which allow for transparent, thick layers, and as a result the diode can be both efficient and reliable.

Stacked electro-optically active organic diode with inorganic semiconductor connection layer

Provided is a filed-effect transistor with an organic semiconductor material showing ambipolar behaviour. Thereto, the organic semiconductor material enabling the ambipolar behaviour is a material with a small band gap.

Electronic device including a field effect transistor having an organic semiconductor channel

The invention pertains to an organic light emitting diode (LED) comprising a transparent electrode, superposed by a layer of a conductive transparent polymer (CTP), superposed by a layer of a light emitting polymer, oligomer, or low molecular weight compound superposed by a metal cathode, characterized in that the CTP layer has a sulfate ion content of less than 7,500 ppm, and a metal ion content of more than 0.04 mmoles/g.

Led comprising a conductive transparent polymer layer with low sulfate and high metal ion content

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Eindhoven, Netherlands

Michael Buechel