Qimonda Ag

Other

Qimonda

Michael Bruennert

Hermann Ruckerbauer

Peter Gregorius

Johannes Stecker

Dirk Scheideler

Christoph Bilger

Maurizio Skerlj

Roland Barth

Wolfgang Walthes

Georg Braun

George William Alexander

Christian Robert Mueller

Ullrich Menczigar

Andreas Gärtner

Andreas Gaertner

Dominique Savignac

Harald Roth

Sitt Tontisirin

Sitt Tontosirin

An electronic device provides a stack of semiconductor chips. A redistribution layer of a first semiconductor chip is arranged at the bottom of the stack. The redistribution layer of the first semiconductor chip comprises external pads.

Electronic device having a chip stack

A system including a central processing unit, a first memory channel being configured to couple the central processing unit to a first semiconductor memory unit, wherein the first memory channel is configured to be clocked with a first clock frequency, and a second memory channel being configured to couple the central processing unit to a second semiconductor memory unit, wherein the second memory channel is configured or configurable to be clocked with a second clock frequency smaller than the first clock frequency.

Memory system with extended memory density capability

Distributed command and address bus architecture for memory modules and circuit boards is described. In one embodiment, a memory module includes a plurality of connector pins disposed on an edge of a circuit board, the plurality of connector pins comprising first pins coupled to a plurality of data bus lines, second pins coupled to a plurality of command and address bus lines, wherein the second pins are disposed in a first and a second region, wherein a portion of the first pins is disposed between the first and the second regions.

Distributed command and address bus architecture for a memory module having portions of bus lines separately disposed

The invention provides a method and an apparatus for determining a skew of each data bit of an encoded data word received by a receiver via an interface from a transmitter comprising the steps of performing an error check and correction of the received and sampled encoded data word to calculate an error corrected encoded data word corresponding to the encoded data word transmitted by the transmitter, and correlating a sequence of error corrected encoded data words with the sampled encoded data words to determine a skew of each data bit of said received encoded data words.

Method and apparatus for determining a skew

The multi-die memory comprises a first die and a second die. The first die comprises a first group of memory banks, and the second die comprises a second group of memory banks. The first group of memory banks and the second group of memory banks are coupled to a common memory interface. The common memory interface couples the multi-die memory with an internal connection.

Multi-die memory, apparatus and multi-die memory stack

An integrated circuit is disclosed. One embodiment provides a sense amplifier; a first bit line; a second bit line. A first switch is configured to connect/disconnect the first bit line to/from the sense amplifier. A second switch is configured to connect/disconnect the second bit line to/from the sense amplifier independently from the first switch.

Integrated circuit

A memory system includes a number of integrated circuit chips coupled to a bus. Each of the integrated circuit chips has an input/output node coupled to the bus, the input/output node having a programmable on-die termination resistor. The input/output node of one of the integrated circuit chips is accessed via the bus. The programmable on-die termination resistor of each of the integrated circuit chips is independently set to a termination resistance. The termination resistance is determined by a transaction type and which of the plurality memory devices is being accessed, which information can be transmitted over a separate transmission control bus.

Bus termination system and method

The invention provides a memory circuit comprising a plurality of storage cells for storing data and redundant spare storage cells for replacing defective storage cells, and a memory access logic for accessing said storage cells connected to a replacement setting register which is writeable during operation of said memory circuit to store replacement settings.

Memory circuit

An integrated circuit includes a device stack including: a memory device with a first wireless coupling element, and a semiconductor device with a second wireless coupling element. The first and second wireless coupling elements are arranged face-to-face and are configured to provide a wireless connection between the memory device and the semiconductor device.

Integrated circuit with wireless connection

Method and apparatus that relate to a storage device comprising a plurality of memory cells, an interface device configured to connect the storage device to a host system and configured to transmit signals to read and write data from the host system to the memory cells via a first and second data path, and a logic unit. The logic unit is configured to read and write data from the plurality of memory cells via the second data path, and configured to perform logic operations on data stored in the plurality of memory cells. When performing read and write operations, the first data path excludes the logic unit, and the second data path includes the logic unit. Furthermore, the logic unit is communicatively coupled between the interface device and the plurality of memory cells. Additionally, a method for manufacturing the memory device is provided.

Method and apparatus for storage device with a logic unit and method for manufacturing same

Memory devices and memory modules are disclosed. In one embodiment, a memory device includes a semiconductor substrate having a first edge and a second edge opposed to the first edge. A plurality of memory banks is disposed at a central portion of the semiconductor substrate, each memory bank including a plurality of memory cells. A plurality of input/output contacts is disposed between the first edge and the memory banks. Delay locked loop circuitry is disposed adjacent the first edge. A plurality of address and command contacts is disposed between the second edge and the memory banks.

High speed memory architecture

A memory die, including a memory array, a memory array data terminal and a data bus that includes a first sub bus and a second sub bus is disclosed. A first bi-directional buffer arranged between the memory array data terminal and the first sub bus and a second bi-directional buffer arranged between the memory array data terminal and the second sub bus is also disclosed. The first and second bi-directional buffers are adapted to couple the first sub bus or the second sub bus to the memory array data terminal at a time.

Memory dies for flexible use and method for configuring memory dies

Horizontal dual in-line memory modules are disclosed. In one embodiment, the memory module includes a circuit board, a plurality of memory chips attached to a top surface of the circuit board, and a plurality of connector contacts disposed under a back surface of the circuit board and extending away from the memory chips, the connector contacts being electrically coupled to the memory chips, the back surface opposite the top surface of the circuit board.

Growing community of inventors

Munich, Germany

Michael Bruennert