University of California

Samsung Electronics Co., Ltd.

Merck Patent Gmbh

Michael Breeden

Andrew C Kummel

Harsono S Simka

Steven J Wolf

Mansour Moinpour

Ravindra Kanjolia

Victor Wang

Ashay Anurag

Described are low resistivity metal layers/films, such as low resistivity ruthenium (Ru) layers/films, and methods of forming low resistivity metal films. Ru layers/films with close-to-bulk resistivity can be prepared on substrates using Ru(CpEt)+OALD, as well as a two-step ALD process using Ru(DMBD)(CO)+TBA (tertiary butyl amine) to nucleate the substrate and Ru(EtCp)+Oto increase layer/film thickness. The Ru layer/films and methods of preparing Ru layers/films described herein may be suitable for use in barrierless via-fills, as well as at M0/M1 interconnect layers.

Method of forming low-resistivity Ru ALD through a bi-layer process and related structures

Provided by the inventive concept are methods for fabricating semiconductor devices, such as methods of atomic layer deposition (ALD). Aspects of the inventive concept include methods for depositing and forming Ru metal layers having low resistivity, forming Ru metal layers without the need for a post-deposition annealing step, forming Ru metal layers selectively on portions of a substrate without the need for passivation, and providing Ru metal layers for use in back end of the line (BEOL) applications in semiconductor devices that do not require a liner/barrier layer.

Methods of performing selective low resistivity Ru atomic layer deposition and interconnect formed using the same

The present inventive concept is related to methods for passivating an oxide layer and methods of selectively depositing a metal, metal nitride, metal oxide, or metal silicide layer on a metal, metal oxide, or silicide layer over an oxide layer including exposing the oxide layer to a passivant that selectively binds to the oxide layer over the metal, metal oxide, or silicide layer, and selectively growing the metal, metal nitride, metal oxide or metal silicide layer on the metal, metal oxide or silicide layer.

Passivation of silicon dioxide defects for atomic layer deposition

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Michael Breeden