Von Ardenne Asset Gmbh &co. Kg

Von Ardenne Gmbh

Michael Brandt

Thomas Meyer

Steffen Mosshammer

Daniel Stange

Damir Muchamedjarow

Sven Heinrich

A processing arrangement comprising: a process chamber comprising an upper chamber wall, a lower chamber wall and two lateral chamber walls; an insulating structure, arranged between the processing region and each of the upper chamber wall, the lower chamber wall and the two lateral chamber walls, respectively, for thermally insulating the processing region, wherein the insulating structure is configured as gas-permeable at least in sections in such a way that a process gas from the processing region can flow out of the processing region in the direction in each of the upper chamber wall, the lower chamber wall and the two lateral chamber walls, respectively, through the insulating structure; and a gas channel, arranged between the insulating structure and each of the upper chamber wall, the lower chamber wall and the two lateral chamber walls, respectively, for pumping away the process gas which flows through the insulating structure.

Processing arrangement and method for conditioning a processing arrangement

In a substrate treatment process, substrates are moved by a transporting device in a transporting direction through a substrate treatment installation having a number of chambers. The substrates are moved by transporting sections of the transporting device driven independently of one another. The transporting sections are driven such that, if substrates dwell temporarily in the transporting section, they are moved back and forth. Stresses in a substrate brought about by differing inputs of heat as a result of both process-induced and malfunction-induced dwell times of the substrate in a chamber are reduced by compensating within the chamber for a structurally brought about input of heat into the substrate, varying periodically over the length of the chamber, during temporary dwelling of the substrate in the chamber by moving the substrate back and forth over at least one period of the heat input by a change of the transporting direction.

Substrate treatment process

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Coswig, Germany

Michael Brandt