Siltronic Ag

Michael Boy

Peter Storck

Andreas Sattler

Timo Mueller

Michael Gehmlich

Dawid Kot

Ludwig Koester

Timo Müller

Elena Soyka

Christina Kruegler

Gudrun Kissinger

Suitability of silicon wafers for use in device processing without generation of fatal defects is assessed by using SIRD to measure stress in a wafer cut from a piece of a crystal ingot after first and second thermal treatments of the water, the second thermal treatment consisting of a heating phase, a holding phase, and a cooling phase. The result is used to consider whether silicon wafers cut from the piece can adequately survive device processing without generating excess defects.

Method for producing semiconductor wafers

Semiconductor wafers are produced by a process wherein a single-crystal ingot of semiconductor material is pulled and at least one wafer is removed from the ingot, wherein the wafer is subjected to a thermal treatment comprising a heat treatment step in which a radial temperature gradient acts on the wafer, wherein an analysis of the wafer of semiconductor material with respect to the formation of defects in the crystal lattice, so-called stress fields, is carried out.

Process for producing semiconductor wafers

A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295&#xb0; C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800&#xb0; C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300&#xb0; C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.

Method for producing a semiconductor wafer composed of monocrystalline silicon

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Michael Boy