Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Michael Binder

Tobias Meyer

Peter Brick

Alexander Linkov

Clemens Vierheilig

Thomas Zeiler

Roland Zeisel

Rainer Hartmann

Andreas Rückerl

Matthias Peter

Jens Ebbecke

Andreas Loeffler

Adam Bauer

Kerstin Neveling

Christine Rafael

Philipp Kreuter

Tilman Schimpke

Andreas Rueckerl

Holger Specht

Moses Richter

Maximilian Tauer

In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

Optoelectronic semiconductor component

An optoelectronic component may include a support and multiple optoelectronic semiconductor chips that can be actuated individually and independently of one another. Each semiconductor chip may include a semiconductor layer sequence. Each semiconductor chip may have an electrically insulating passivation layer on the respective lateral surface of the semiconductor layer sequence. The semiconductor chip(s) are assigned to a first group, which may be paired with a common boundary field generating device arranged on the passivation layer face facing away from the semiconductor layer sequence at an active zone for each semiconductor chip of the first group. The boundary field generating device is designed to at least temporarily generate an electric field in the boundary regions of the active zone so that a flow of current through the semiconductor layer sequences can be controlled in the boundary regions during the operation of the semiconductor chips of the first group.

Optoelectronic component and method for producing an optoelectronic component

A method for operating a light emitting diode arrangement with at least one light emitting diode includes the steps of: a) determining at least one instantaneous current-voltage value pair; b) matching the instantaneous current-voltage value pair with an original current-voltage value pair; and c) determining an updated current feed based on the matching and driving the light emitting diode with the updated current feed.

Method for operating a light emitting diode arrangement, method for characterizing a light emitting diode, and light emitting diode arrangement

Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.

Optoelectronic component, optoelectronic component group in buffer layer opening and production method for same

Disclosed is a conversion element () comprising an active region () that is formed by a semiconductor material and includes a plurality of barriers () and quantum troughs (), a plurality of first structural elements () on a top face (la) of the conversion element (), and a plurality of second structural elements () and/or third structural elements () which are arranged on a face of the active region () facing away from the plurality of first structural elements (). Also disclosed is a method for producing a conversion element of said type.

Conversion element and radiation-emitting semiconductor device comprising a conversion element of said type

An optoelectronic semiconductor device includes a semiconductor layer sequence including an active zone that generates radiation by electroluminescence; a p-electrode and an n-electrode; an electrically insulating passivation layer on side surfaces of the semiconductor layer sequence; and an edge field generating device on the side surfaces on a side of the passivation layer facing away from the semiconductor layer sequence at the active zone, wherein the edge field generating device is configured to generate an electric field at least temporarily in an edge region of the active zone so that, during operation, a current flow through the semiconductor layer sequence is controllable in the edge region.

Optoelectronic semiconductor device and method of operating an optoelectronic semiconductor device

An optoelectronic semiconductor chip is disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor body comprising a first semiconductor structure, a second semiconductor structure and an active region between the first and the second semiconductor structure and a plurality of recesses, each penetrating at least one of the semiconductor structures and the active region, wherein a cover surface of the active region is a continuous surface, and wherein at least in some of the recesses, surfaces of the recesses are completely covered with an electrically insulating material.

Optoelectronic semiconductor chip

An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. A radiation-transmissive body having four side faces is provided. The radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner. The radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60&#xb0; and 70&#xb0; to the mounting face. The base member has a thickness which amounts to at most 250 &#x3bc;m.

An optoelectronic semiconductor component is provided, having a connection carrier (), an optoelectronic semiconductor chip (), which is arranged on a mounting face () of the connection carrier (), and a radiation-transmissive body (), which surrounds the semiconductor chip (), wherein the radiation-transmissive body () contains a silicone, the radiation-transmissive body () has at least one side face () which extends at least in places at an angle &#x3b2; of &#x3c;90&#xb0; to the mounting face () and the side face () is produced by a singulation process.

An optoelectronic semiconductor component is provided, having a connection carrier (), an optoelectronic semiconductor chip (), which is arranged on a mounting face () of the connection carrier (), and a radiation-transmissive body (), which surrounds the semiconductor chip (), wherein the radiation-transmissive body () contains a silicone, the radiation-transmissive body () comprises at least one side face () which extends at least in places at an angle &#x3b2; of &#x3c;90&#xb0; to the mounting face () and the side face () is produced by a singulation process.

Growing community of inventors

Manching, Germany

Michael Binder