Infineon Technologies Ag

Siemens Aktiengesellschaft

Michael Bianco

Helmut Klose

Emmerich Bertagnolli

Reinhard Mahnkopf

Adrian Berthold

Gustav Beckmann

Karl Ehinger

A low noise transistor and a method of making a low noise transistor. A noise-reducing agent is introduced into the gate electrode and then moved into the gate dielectric of a transistor.

Low noise transistor and method of making same

A memory cell array has memory cells in which there is an electrical connection between a polycrystalline semiconductor material of a capacitor electrode and a monocrystalline semiconductor region. Islands made of an amorphous material are disposed in a vicinity of the electrical connection between the polycrystalline semiconductor material and the monocrystalline semiconductor region. The islands are produced in particular by thermally breaking up an amorphous layer which has been formed by thermal oxidation. The memory cell array is in particular a DRAM array with a trench capacitor.

Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistor

A doped region (14) is produced in a substrate (11) of silicon by diffusion of dopant from a doped glass layer (13) that is arranged on an intermediate layer (12) situated on the substrate (11) . The dopant concentration in the doped region (14) is thereby limited by the intermediate layer (12). The doped glass layer (13) is particularly produced by chemical vapor deposition of (B(OSi(CH.sub.3).sub.3).sub.3).

Method for producing a doped region in a substrate

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Munich, Germany

Michael Bianco