Heraeus Gmbh

Zetta Research and Development LLC - Aqt Series

Aqt Solar, Inc.

Michael Bartholomeusz

Brian Josef Bartholomeusz

Michael Tsai

Anand Deodutt

Erol Girt

Mariana Rodica Munteanu

Carlos Chappa

Methods are described for depositing thin films, such as those used in forming a photovoltaic cell or device. In particular embodiments, one or more layers are deposited on a substrate by plasma spraying over the substrate. A grain size of grains in each of the one or more layers is at least approximately two times greater than a thickness of the respective layer. Accordingly, large flat-grained structures are formed in each respective layer, and grain boundaries within each respective layer can be minimized.

Plasma spray deposition of photovoltaic thin films with grain boundary minimization

In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu(SeSTe), wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.

Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same

In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.

Deposition of photovoltaic thin films by plasma spray deposition

In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.

Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques

An ingot of material which is normally too brittle to allow successful rolling and wrought processing is formed so as to have a thickness-to-width ratio of less than about 0.5 and is annealed in a temperature range of 1000&deg; F. to 2500&deg; F. for a preselected time. The ingot is then rolled in a temperature range of 1500&deg; F. to 2500&deg; F. Additional/optional annealing of the resulting rolled plate in a temperature range of 500&deg; F. to 2000&deg; F., or between room temperature and 1500&deg; F., and/or a final annealing between 500&deg; F. and 1500&deg; F., is possible. Sputtering targets are cut out of the rolled plate and used for the manufacture of storage disks.

Wrought processing of brittle target alloy for sputtering applications

Magnetic materials for use in sputtering targets are hot rolled and stretched at ambient temperature or at a temperature not exceeding 1400&deg; F. The magnetic material can be pure Co, pure Ni, or Co based alloys.

Stretching of magnetic materials to increase pass-through-flux (PTF)

A method for making a magnetic data storage target includes warm-rolling a magnetic alloy sheet at a temperature of less than about 1200&deg; F., optimally followed by annealing. The method results in increased pass-through-flux (PTF) and improved performance in magnetron sputtering applications.

Magnetic data-storage targets and method for preparation

Cobalt-based Ta-containing magnetic target alloy materials are produced in which homogeneity of the magnetic material is improved by eliminating Ta-rich second phases in the microstructure by a process comprising soaking ingots of said alloy from which targets are to be produced at temperatures ranging from 1600&deg; to 2600&deg; F. for periods of 10 minutes to 24 hours prior to hot-rolling, preferably using multiple steps, then hot-rolling at similar temperatures utilizing at least a 3% reduction for pass, and optionally soaking the rolled plates from said rolling step at temperatures ranging from 2000&deg; to 2600&deg; F. for periods of 10 minutes to 24 hours.

Magnetic data-storage targets and methods for preparation

A method for making a magnetic data storage target includes warm-rolling a magnetic alloy sheet at a temperature of less than about 1200.degree. F., optimally followed by annealing. The method results in increased pass-through-flux (PTF) and improved performance in magnetron sputtering applications.

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Phoenix, AZ, United States of America

Michael Bartholomeusz