Advanced Technology Materials, Inc.

Entegris, Inc.

International Business Machines Corporation

Warner Babcock Institute for Green Chemistry, LLC

Michael B Korzenski

Thomas H Baum

Ping Jiang

Chongying Xu

Eliodor G Ghenciu

David W Minsek

Emanuel Israel Cooper

Tianniu Chen

William R Bowers

Kevin Paul Yanders

Eileen Sparks

Mark A Biscotto

Martha M Rajaratnam

Pamela M Visintin

John Charles Warner

David Daniel Bernhard

Mackenzie E King

Melissa K Rath

Prerna Sonthalia

Nicole E Thomas

André Brosseau

Svitlana Grigorenko

Renjie Zhou

Glenn M Tom

Mahmoud M Khojasteh

Steven M Bilodeau

Karl E Boggs

George Gabriel Totir

Alexander S Borovik

James Glenn Norman

Kim Van Berkel

George Mirth

Laura R Muollo

Sarah L Poe

Christopher L Paradise

Laura Ingalls

Reshma Pal

Dinakar Gnanamgari

Fred Strickler

Ted Mendum

Julie Cissell

John C Warner

David D Bernhard

David Minsek

Processes for recycling printed wire boards using environmentally-friendly compositions, wherein electronic components, precious metals and base metals may be collected for reuse and recycling.

Method for recycling of obsolete printed circuit boards

A method of recovering lithium cobalt oxide from spent lithium ion batteries, wherein said method is more environmentally friendly than the methods presently known in the art. The method includes a froth flotation step using renewable and biodegradable solvents such as terpenes and formally hydrated terpenes. The method can also include a relithiation step to return the Li:Co ratio back to about 1:1 for use in second-life applications.

Method for the recovery of lithium cobalt oxide from lithium ion batteries

Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module.

Apparatus and method for stripping solder metals during the recycling of waste electrical and electronic equipment

Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100&#xb0; C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 &#x212b; min.

Compositions and methods for the selective removal of silicon nitride

An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.

Oxidizing aqueous cleaner for the removal of post-etch residues

Processes for recycling electronic components removed from printed wire boards, whereby precious metals and base metals are extracted from the electronic components using environmentally friendly compositions. At least gold, silver and copper ions can be extracted from the electronic components and reduced to their respective metals using the processes and compositions described herein.

Sustainable process for reclaiming precious metals and base metals from e-waste

Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100&#xb0; C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 &#x212b; min.

Compositions and methods of using said composition for removing polymeric materials from surfaces, preferably cleaning contaminant buildup from a lithography apparatus without total disassembly of said apparatus.

Lithographic tool in situ clean formulations

A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.

Composition and method for recycling semiconductor wafers having low-k dielectric materials thereon

A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.

Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate

Growing community of inventors

Danbury, CT, United States of America

Michael B Korzenski