Advanced Micro Devices Corporation

Cypress Semiconductor Corporation

Michael B Allen

Fred N Hause

Dennis C Swartz

Jesse C Ramos

Allan T Nelson

William A Whigham

Patrick B Lee

Jeffrey P Geuea

Richard A Anundson

Provided herein is a method of processing an electronic device including operating a processing chamber at a first temperature while a workpiece is being processed and removing the workpiece and a carrier holding the workpiece from the processing chamber while decreasing the temperature within the processing chamber to a second temperature significantly lower than the first temperature. The method also includes increasing the temperature within the processing chamber to a third temperature significantly greater than the second temperature and significantly less than the first temperature while the processing chamber has no workpiece or carrier within.

Method of operating a processing chamber used in forming electronic devices

The method as disclosed reduces the topological step between the uppermost surface of a substrate and the uppermost surface of a shallow trench isolation feature. The method includes the steps of forming a pad oxide layer overlying a substrate, forming a stop layer overlying the pad oxide layer, forming a second oxide layer overlying the stop layer, forming a patterning layer overlying the second oxide layer, and patterning the patterning layer and underlying stack to form an exposed portion of the substrate. The exposed portion of substrate is etched to form a trench, and the remaining portion of the oxidation resistant layer is removed. Further, a dielectric layer is formed overlying the remaining portion of the second oxide layer, and filling the trench. A portion of the dielectric layer is removed to leave the top of the dielectric layer substantially level with the stop layer, and then the stop layer is removed.

Method of topography management in semiconductor formation

A multi-port gas injector for a vertical furnace that is utilized for low-pressure chemical vapor deposition of silicon dioxide using a tetraethyl orthosilicate (&ldquo;TEOS&rdquo;) source is provided. The multi-port gas injector has two or three ports for introducing TEOS into the vertical furnace. The gas injector includes a first and second section of tubing, preferably made of quartz, joined such that they are preferably substantially perpendicular. One end of the second section forms one of the ports. In one embodiment a hole located at the position where the first and second sections are joined forms a second port. In other embodiments, a third and, possibly, a fourth section of tubing are joined to the second section of tubing to form a second and, possibly, a third port. Additionally, the second section of tubing may have one or more tapers to reduce the diameter of the hole through which gas exits.

Multi-port gas injector for a vertical furnace used in semiconductor processing

A low-pressure CVD apparatus is presented including one or more gas heating subsystems which heat process gases prior to their introduction into a reaction chamber of the low-pressure CVD apparatus. As a result, thermal expansions and contractions of the walls of the reaction chamber are reduced, along with the tendency of small particles of deposits on the inner walls of the reaction chamber to flake off. Fewer loose particulates created within the reaction chamber results in a reduction in the number of particulates adhering to surfaces of processed silicon wafers. Each gas heating subsystem includes a heating element thermally coupled to a gas feed line and to a process gas flowing within the gas feed line. Each gas heating subsystem also preferably includes a thermal feedback temperature control mechanism including a temperature sensor and a temperature control unit. The temperature sensor senses the temperature of the heated flow of process gas and produces a corresponding temperature signal. The temperature control unit is coupled to receive the temperature signal from the temperature sensor and controls the temperature of the heating element in response to the temperature signal. The temperature of the process gas entering the reaction chamber may thus be controllably increased.

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Buda, TX, United States of America

Michael B Allen