Applied Materials, Inc.

Michael Anthony Stolfi

Benjamin Colombeau

Myungsun Kim

Suketu Arun Parikh

Seshadri Ganguli

Roey Shaviv

Jianshe Tang

Joung Joo Lee

Sanjay S Natarajan

Rong Tao

David Maxwell Gage

Shirish A Pethe

Andy Lo

Chi-I Lang

Yong Cao

Jingmei Liang

Martin Jay Seamons

Daniel Lee Diehl

Jothilingam Ramalingam

Tejinder Singh

Lifan Yan

Eric Davey

Hoyung David Hwang

Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise an oxide layer and a semiconductor material layer between source regions and drain regions of the device. The method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer. An alternative method includes growing a conformal epitaxial layer on a nanosheet channel layer, followed by a surface treatment, and then radical plasma oxidation (RPO) to oxidize the conformal epitaxial layer.

Formation of gate all around device

Provided are methods of depositing a film in high aspect ratio (AR) structures with small dimensions. The method provides flowable deposition for seamless gap-fill, film densification by low temperature inductively coupled plasma (ICP) treatment (<600° C.), optional film curing, and etch back to form a low-k dielectric film having a dielectric constant, k-value less than 3.

Integrated flowable low-k gap-fill and plasma treatment

Horizontal gate-all-around devices and methods of manufacturing the same are described. The hGAA devices comprise an oxidize layer on a semiconductor material between source regions and drain regions of the device. The method includes radical plasma oxidation (RPO) of semiconductor material layers between source regions and drain regions of an electronic device.

Conformal oxidation for gate all around nanosheet I/O device

Horizontal gate-all-around devices and methods of manufacturing same are described. The hGAA devices comprise a trimmed semiconductor material between source regions and drain regions of the device. The method includes selectively isotropically etching semiconductor material layers between source regions and drain regions of an electronic device.

Selective silicon etch for gate all around transistors

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1X feature and at least one wider than 1X feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1X feature and at least one wider than 1X feature; the first metal material is reflowed such that the at least one 1X feature is filled with the first metal material and the at least one wider than 1X feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1X feature is filled with the second metal material.

Methods and apparatus for forming dual metal interconnects

Methods for forming a film stack comprising a hardmask layer and etching such hardmask layer to form features in the film stack are provided. The methods described herein facilitate profile and dimension control of features through a proper profile management scheme formed in the film stack. In one or more embodiments, a method for etching a hardmask layer includes forming a hardmask layer on a substrate, where the hardmask layer contains a metal-containing material containing a metal element having an atomic number greater than 28, supplying an etching gas mixture to the substrate, and etching the hardmask layer exposed by a photoresist layer.

Film stack for lithography applications

Methods and apparatus for creating a dual metal interconnect on a substrate. In some embodiments, a first liner of a first nitride material is deposited into at least one 1&#xd7; feature and at least one wider than 1&#xd7; feature, the first liner has a thickness of less than or equal to approximately 12 angstroms; a second liner of a first metal material is deposited into the at least one 1&#xd7; feature and at least one wider than 1&#xd7; feature; the first metal material is reflowed such that the at least one 1&#xd7; feature is filled with the first metal material and the at least one wider than 1&#xd7; feature remains unfilled with the first metal material; a second metal material is deposited on the first metal material, and the second metal material is reflowed such that the at least one wider than 1&#xd7; feature is filled with the second metal material.

Growing community of inventors

Clifton Park, NY, United States of America

Michael Anthony Stolfi