USA As Represented by Secretary of the Navy

University of Florida Research Foundation, Incorporated

Michael Anthony Mastro

Francis J Kub

Charles R Eddy, Jr

Travis J Anderson

Karl D Hobart

Jennifer K Hite

Marko J Tadjer

Andrew D Koehler

Rachael L Myers-Ward

Virginia D Wheeler

Mark Goorsky

Neeraj Nepal

Samuel Graham, Jr

Sandra C Hangarter

Asif Khan

Geoffrey M Foster

Jihyun Kim

Olga Kryliouk

Joshua D Caldwell

Tatyana I Feygelson

James E Butler

Timothy J Anderson

Shahzad Akbar

Jaime A Freitas

Kendrick X Liu

Semiconductor heterostructures having an engineered polarization. Semiconductor materials having specified crystallographic directions and specified polarizations are directly bonded to one another by means of atomic layer bonding without the use of any interfacial bonding materials, where spontaneous polarization of the two layers produced by joining the two materials by direct wafer bonding produces a strong 2DEG or 2DHG at the interface. Embodiments include GaN/AlN and AlN/GaN heterostructures having an N- or Ga-polar GaN layer directly bonded to an N- or Al-polar Al layer. Other embodiments can incorporate an InN epitaxial layer or an alloy incorporating an N-polar, Al-polar, or Ga-polar material having In, Al, or Ga in the crystal lattice, e.g., (InAlN), InGaN, AlGaN, InAlGaN, where (0<x≤1, 0<y≤1, 0<x+y≤1).

Polarization-engineered heterogeneous semiconductor heterostructures

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a vertical LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body, the first electrode defining an area through which light energy from at least one light source can impinge on the first surface; and a second electrode in contact with a second surface of the semiconductor body opposed to the first surface, wherein the vertical LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.

Low resistance photoconductive semiconductor switch (PCSS)

Light controlled switching modules are provide. In embodiments, a light controlled switching module includes: a housing; a light controlled semiconductor switch mounted to the housing, the light controlled semiconductor switch including a semiconductor body; at least one light source mounted to the housing in a spaced relationship from the light controlled semiconductor switch and positioned to direct light emitted from the at least one light source toward the semiconductor body; and first and second electrodes mounted to the housing and connected to the light controlled semiconductor switch, wherein the first and second electrodes are configured to have variable resistance between the first and the second electrode.

Light controlled switch module

A hyperbolic metamaterial assembly comprising alternating one or more first layers and one or more second layers forming a hyperbolic metamaterial, the one or more first layers comprising an intrinsic or non-degenerate extrinsic semiconductor and the one or more second layers comprising a two-dimensional electron or hole gas, wherein one of in-plane or out-of-plane permittivity of the hyperbolic metamaterial assembly is negative and the other is positive.

Devices with semiconductor hyperbolic metamaterials

A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.

Growth of crystalline materials on two-dimensional inert materials

A device with N-Channel and P-Channel III-Nitride field effect transistors comprising a non-inverted P-channel III-Nitride field effect transistor on a first nitrogen-polar nitrogen face III-Nitride material, a non-inverted N-channel III-Nitride field effect transistor, epitaxially grown, a first III-Nitride barrier layer, two-dimensional hole gas, second III-Nitride barrier layer, and a two-dimensional hole gas. A method of making complementary non-inverted P-channel and non-inverted N-channel III-Nitride FET comprising growing epitaxial layers, depositing oxide, defining opening, growing epitaxially a first nitrogen-polar III-Nitride material, buffer, back barrier, channel, spacer, barrier, and cap layer, and carrier enhancement layer, depositing oxide, growing AlN nucleation layer/polarity inversion layer, growing gallium-polar III-Nitride, including epitaxial layers, depositing dielectric, fabricating P-channel III-Nitride FET, and fabricating N-channel III-Nitride FET.

Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material

A device with complementary non-inverted N-channel and inverted P-channel field effect transistors comprising a layer grown epitaxially on a substrate, a barrier layer, a two-dimensional electron gas in the first III-Nitride epitaxial layer, a second III-Nitride material layer, and a two-dimensional hole gas in the second III-Nitride epitaxial layer. A device with complementary inverted N-channel and non-inverted P-channel field effect transistors comprising a nitrogen-polar III-Nitride layer grown epitaxially, a barrier material layer, a two-dimensional hole gas, and a two-dimensional electron gas in the second III-Nitride epitaxial layer. A method of making complementary inverted P-channel and non-inverted N-channel III-Nitride field effect transistors. A method of making a complementary non-inverted P-channel field effect transistor and inverted N-channel III-Nitride field effect transistor on a substrate.

High electron mobility transistors and fabrication processes are presented in which a barrier material layer of uniform thickness is provided for threshold voltage control under an enhanced channel charge inducing material layer (ECCIML) in source and drain regions with the ECCIML layer removed in the gate region.

Transistor with enhanced channel charge inducing material layer and threshold voltage control

An LED device having plasmonically enhanced emission is provided. The device includes an inverted LED structure with a coating of metal nanoparticles on the surface chosen to match the plasmonic response to the peak emission from the active quantum well (QW) emission region of the LED. The active QW emission region is separated from the metal nanoparticles on the surface by a thin n-type contact layer disposed on a top side of the active QW emission. A p-type layer is disposed immediately beneath the active QW emission region and injects holes into the active QW emission region. The n-type contact layer is sufficiently thin to permit a coupling of the surface plasmons (SPs) from the metal nanoparticles and the excitons in the active QW emission region. The SP-exciton coupling provides an alternative decay route for the excitons and thus enhances the photon emission from the LED device.

Inverted light-emitting diode having plasmonically enhanced emission

Inverted light emitting diode having plasmonically enhanced emission

A heterojunction between thin films of NCD and 4H&#x2014;SiC was developed. Undoped and B-doped NCDs were deposited on both n&#x2212; and p&#x2212; SiC epilayers. I-V measurements on p+ NCD/n&#x2212; SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2 V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30&#xb0; C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film.

Growing community of inventors

Fairfax Station, VA, United States of America

Michael Anthony Mastro