Cypress Semiconductor Corporation

Infineon Technologies LLC

Michael Amundson

Krishnaswamy Ramkumar

Ravindra Manohar Kapre

Long Hinh

Vineet Agrawal

Santanu Kumar Samanta

Swatilekha Saha

Venkataraman Prabhakar

Timothy John Williams

Venkatraman Prabhakar

A method of operating a semiconductor inference device that includes the steps of writing one of multiple analog weight values to memory cells of a non-volatile memory (NVM) array, receiving inputs through a bus system, performing multiply accumulate (MAC) operations based on the inputs and the stored analog weight values, converting results of the MAC operations to outputs, and transmitting the outputs through the bus system.

Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device and methods of operation thereof

A semiconductor inference device that has a non-volatile memory (NVM) array including NVM cells arranged in rows and columns, in which each NVM cell comprises a charge trapping transistor configured to store one of N&#xd7;analog values corresponding to N&#xd7;levels of its drain current (ID) or threshold voltage (VT) levels, representing N&#xd7;weight values for multiply accumulate (MAC) operations. The semiconductor inference device also includes digital-to-analog (DAC) function and multiplexor (mux) function configured to generate an analog MAC result based on the digital inputs converted results and the weight values read results, and analog-to-digital (ADC) function configured to convert the analog MAC result of the mux function to a digital value. Other embodiments of the semiconductor inference device and related methods and systems are also disclosed.

A semiconductor device that has a semiconductor-oxide-nitride-oxide-semiconductor (SONOS) based non-volatile memory (NVM) array including NVM cells arranged in rows and columns, in which NVM transistors of the NVM cells are configured to store N&#xd7;analog values corresponding to the N&#xd7;levels of their drain current (I) or threshold voltage (V) levels, digital-to-analog (DAC) function that receives and converts digital signals from external devices, column multiplexor (mux) function that is configured to select and combine the analog value read from the NVM cells, and analog-to-digital (ADC) function that is configured to convert analog results of the column mux function to digital values and output the digital values.

Silicon-oxide-nitride-oxide-silicon based multi level non-volatile memory device and methods of operation thereof

A method for recovery from overstress conditions, comprising the steps of (A) detecting an overstress event, (B) storing an occurrence of the overstress event and (C) taking appropriate action in response to the stored occurrence of the overstress event.

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Woodinville, WA, United States of America

Michael Amundson