Intel Corporation

Michael A Maxim

Oleh Karpenko

Brett E Huff

Farshid Adibi-rizi

Kenneth C Cadien

Matthew J Prince

Ning Hsieh

Michael Kocsis

Electron emission structures formed using standard semiconductor processes on a substrate first prepared with a topographical feature are disclosed. At least one layer of a first material is concurrently deposited on the substrate and etched from the substrate to form an atomically sharp feature. An at least one layer of a second material is deposited over the atomically sharp feature. A conductive layer is deposited over the at least one layer of the second material. A selected area of material is removed from the conductive layer and the at least one layer of second material to expose the atomically sharp feature. Finally, electrical connectivity is provided to elements of the electron emission structure.

Design structures of and simplified methods for forming field emission microtip electron emitters

Methods for forming microtips in a field emission device

A method and apparatus for compensating for the effects of nonuniform planarization in chemical-mechanical polishing (CMP) such as the erosion occurring from the removal of titanium nitride/tungsten films is disclosed. In the context of alignment marks, dummy marks are disposed on both sides of the actual alignment marks providing a similar feature density as the alignment marks. During the CMP, the dummy marks reside in the area of nonuniform erosion, leaving the actual marks in an area of uniform erosion. The present invention may also be used to control underlayer erosion variations in the high feature density device areas adjacent to the low feature density open areas by providing dummy features in the low feature density areas.

Sacrificial erosion control features for chemical-mechanical polishing

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San Jose, CA, United States of America

Michael A Maxim