Xerox Corporation

Palo Alto Research Center Inc.

Technische Unversität Berlin

Forschungsverbund Berlin E.v.

Deutsches Rheuma-forschungszentrum Berlin

Forschungsverbund E.v.

Michael A Kneissl

David P Bour

Linda T Romano

Noble Marshall Johnson

Peter Kiesel

Christian G Van De Walle

Christopher L Chua

William S Wong

John E Northrup

Thomas L Paoli

Mark Teepe

David Kalman Biegelsen

Ping Mei

Zhihong Yang

H Ben Hsieh

Cliff Knollenberg

Meng H Lean

Decai Sun

Thomas Wunderer

Huangpin Ben Hsieh

Ross D Bringans

Jack A Walker

David W Treat

Daniel Hofstetter

Oliver Wolst

Sven Einfeldt

Tim Kolbe

Patrick Yasuo Maeda

Steven E Ready

Oliver Schmidt

Michael L Chabinyc

Brent Shawhan Krusor

Richard Kounai Chang

Clifford F Knollenberg

Joseph Zyss

Markus Weyers

Clarence John Dunnrowicz

Toralf Kaiser

Chris G Van De Walle

A Douglas Stone

Hakan E Tureci

Hernan Rodriguez

Tanya J Cervantes

Luca Redaelli

Grace D Chern

Light emitting devices having an enhanced degree of polarization, P, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, &#x3bb;, and a degree of polarization, P, where P&#x3e;0.006&#x3bb;&#x2212;b for 200 nm&#x2264;&#x3bb;&#x2264;400 nm, wherein b&#x2264;1.5.

Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction

A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact () on a surface () of a semiconductor () and has the steps of: applying a metal layer () of palladium onto the semiconductor surface (), applying a mask () onto the metal layer (), and structuring the palladium of the metal layer () using the mask (), wherein lateral deposits () of the metal are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits () and the structured metal layer (') after the structuring. Since the mask is conductive, it can remain embedded in the metal. The deposits and the mask form a part of the contact.

Method for forming a metal contact on a surface of a semiconductor, and device with a metal contact

An ultraviolet (UV) light emitting structure, a UV light emitting device, and a method of making a UV light emitting structure or device, wherein the UV light emitting structure or device has an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layers and wherein the injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone.

UV LED with tunnel-injection layer

A flow cytometer disinfection module is useful for disinfecting a sheath fluid in a flow cytometer. The module includes a flow cell and at least one UV-C and/or UV-B light source. The UV-C and/or UV-B light source is disposed about the cell and irradiates a sheath fluid passing through the cell.

Flow cytometer disinfection module

The present invention relates to a p-doped contact for use in a light-emitting diode for the ultraviolet spectral range, comprising a p-contact layer having a first surface for contacting a radiation zone and a second surface comprising, on the side facing away from the first surface: a) a coating, which directly contacts 5%-99.99% of the second surface of the p-contact layer and contains or consists of a material having a maximum reflectivity of at least 60% for light with a wavelength of 200 nm to 400 nm; b) a plurality of p-injectors, which are disposed directly on the second surface of the p-contact layer.

P-contact and light-emitting diode for the ultraviolet spectral range

Light emitting devices having an enhanced degree of polarization, P, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, &#x3bb;, and a degree of polarization, P, where P&#x3e;0.006&#x3bb;&#x2212;b for 200 nm&#x2266;&#x3bb;&#x2266;400 nm, wherein b&#x2266;1.5.

A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.

Light emitting structure including high-al content MQWH

Method of manufacturing a semiconductor device including a superlattice strain relief layer

A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results.

High power semiconductor device to output light with low-absorbtive facet window

A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning many device types including regular lasers and VCSEL structures. The adjustment also allows for mass production of lasers of many different frequencies on a single wafer substrate, a system particularly desirable for wavelength division multiplexing systems.

System for adjusting the wavelength light output of a semiconductor device using hydrogenation

A compact sensor for detecting the presence of biological or chemical species includes a microdisk laser and a wavelength shift detector. The microdisk laser is coated with a biological or chemical recognition element, which binds preferentially with a target analyte. Because the recognition element and the target analyte adhere to the sidewall surface of the microdisk laser, they increase the effective diameter of the laser, which shifts the output wavelength by a detectable amount. The presence of a wavelength shift indicates the presence of the target analyte, and the magnitude of the wavelength shift corresponds to the mass load of the target analyte on the sidewall surface of the microdisk laser.

Biosensor using microdisk laser

A novel indium gallium nitride laser diode is described. The laser uses indium in either the waveguide layers and/or the cladding layers. It has been found that InGaN waveguide or cladding layers enhance optical confinement with very small losses. Furthermore, the use of InGaN waveguide or cladding layers can improve the structural integrity of active region epilayers because of reduced lattice mismatch between waveguide layers and the active region.

Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure

Superlattice strain relief layer for semiconductor devices

Provided is a method of forming an acoustic based device, including forming an AlGaN region having a first surface and a second surface. A first electrode is deposited on the first surface of the AlGaN region, and then a second electrode is deposited on a second surface of the AlGaN-region. In another aspect of the present application, the AlGaN region is formed by an epitaxial layer overgrowth process.

Acoustic devices using an AlGaN piezoelectric region

A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.

Buried lateral index guided lasers and lasers with lateral current blocking layers

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Mountain View, CA, United States of America

Michael A Kneissl