Ut-battelle, Inc.

Michael A Guillom

Michael Leon Simpson

Douglas H Lowndes

Vladimir I Merkulov

Anatoli Vasilievich Melechko

Gated field emission devices and systems and methods for their fabrication are described. A method includes growing a substantially vertically aligned carbon nanostructure, the substantially vertically aligned carbon nanostructure coupled to a substrate; covering at least a portion of the substantially vertically aligned carbon nanostructure with a dielectric; forming a gate, the gate coupled to the dielectric; and releasing the substantially vertically aligned carbon nanostructure by forming an aperture in the gate and removing a portion of the dielectric.

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Knoxville, TN, United States of America

Michael A Guillom