Georgia Tech Research Corporation

Michael A Filler

Sven Holger Behrens

Laurens Victor Breedveld

Eric Vogel

A method of chemically etching, comprising: providing a base layer, the base layer comprising a first section and a second section, the first section comprising a first material, the second section comprising a second material; providing a resist layer, wherein a first portion of the resist layer covers at least a portion of the first section of the base layer, and wherein a second portion of the resist layer covers at least a portion of the second section of the base layer; and exposing the first and second portions of the resist layer to a first chemical etchant, such that the first chemical etchant migrates through the first portion of the resist layer to react with the first material of the first section of the base layer and removes the first portion of the resist layer, and such that the second portion of the resist layer is not removed.

Chemical etching methods for fabricating nanostructures

A method for forming nanostructures including introducing a hollow shell into a reactor. The hollow shell has catalyst nanoparticles exposed on its interior surface. The method also includes introducing a precursor into the reactor to grow nanostructures from the interior surface of the hollow shell from the catalyst nanoparticles.

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Atlanta, GA, United States of America

Michael A Filler