At&t Bell Laboratories

Bell Telephone Laboratories

Michael A DiGiuseppe

Daniel Brasen

Jose A Lourenco

Subhash Mahajan

Henryk Temkin

Aland K Chin

In the liquid phase epitaxy growth of Group III-V compound semiconductors using boat-slider apparatus, melt-carry-over is essentially eliminated by prebaking the metallic solvent (e.g., In shot) in the boat to form ingots and then etching the ingots in dilute nitric or hydrochloric acid prior to adding solutes (e.g., GaAs, InP, dopants). This process removes contaminants which coalesce on the ingots and cause poor wipe-off.

Method of preparing indium ingots

Cleaning technique for LPE melt ingots

A light emitting diode designed to emit primarily at 1.3 microns comprises a crystal having a plurality of lattice matched layers including an n-type indium phosphide front surface layer, an n-type indium phosphide buffer layer, a p-type indium gallium arsenide phosphide active layer, a p-type indium phosphide confining layer and an indium gallium arsenide back surface layer, and an annular front contact and a limited area back contact to the crystal.

Light emitting diode

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Succasunna, NJ, United States of America

Michael A DiGiuseppe