International Business Machines Corporation

Other

Michael A Cobb

Mahadevaiyer Krishnan

Michael F Lofaro

Jack Oon Chu

Leathen Shi

Dennis G Manzer

Philip A Saunders

Cyril Cabral, Jr

Christian Lavoie

Renee Tong Mo

Jay William Strane

Randolph F Knarr

Balasubramanian S Pranatharthi Haran

Horatio Seymour Wildman

James Anthony Tornello

Asa Frye

Andrew P Mansson

Donald Francis Canaperi

Eric Jeffrey White

William J Cote

Kenneth M Davis

Scott Alan Estes

Michael T Brigham

Edward Jack Gordon

Michael Joseph MacDonald

James Hannah

Dinesh R Koli

Dean Allen Schaffer

George James Slusser

Paraneetha Poloju

A bullet loader method and apparatus that enables a user to easily load bullets into a gun magazine. The gun magazine is inserted into the apparatus magazine opening. Bullets are individually loaded into the bullet loader with a grooved cam, so that the individual bullets rest in the groove. The cam is rotated so that the bullet travels within the groove(s) of the cam and pushed with a cog attached to the end of the groove into the magazine. The bullet is pushed into the magazine with both a downward and inward force to overcome the spring resistance of the magazine.

Bullet loader and method of use

An apparatus for chemical mechanical planarization includes a spindle assembly structure and at least one substrate carrier, which make a linear lateral movement relative to each other while abrasive surfaces of a plurality of cylindrical spindles in the spindle assembly structure contact, and rotate against, at least one substrate mounted on the at least one substrate carrier. The direction of the linear lateral movement is within the plane that tangentially contacts the plurality of cylindrical spindles, and can be orthogonal to the axes of rotation of the plurality of cylindrical spindles.

Multi-spindle chemical mechanical planarization tool

The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire semiconductor structure which includes at least one gate stack region. An oxygen diffusion barrier comprising, for example, Ti, TiN or W is deposited over the structure to prevent oxidation of the metals. An annealing step is then employed to cause formation of a NiSi, PtSi contact in regions in which the metals are in contact with silicon. The metal that is in direct contact with insulating material such as SiOand SiNis not converted into a metal alloy silicide contact during the annealing step A. selective etching step is then performed to remove unreacted metal from the sidewalls of the spacers and trench isolation regions.

Method and process for forming a self-aligned silicide contact

A glass mold polishing structure and method. The method includes providing a polishing tool comprising mounting plate, a chuck plate over and mechanically attached to the mounting plate, and a pad structure over and mechanically attached to the chuck plate. A retaining structure is attached the chuck plate. A glass mold comprising a plurality of cavities is placed on the pad structure and within a perimeter formed by the retaining structure. A vacuum device is attached to the chuck plate. The vacuum device is activated such that a vacuum is formed and mechanically attaches the glass mold to the pad structure. The polishing tool comprising the glass mold mechanically attached to the pad structure is placed over and in contact with the polishing pad. The polishing tool comprising the glass mold is rotated. The glass mold is polished as a result of the rotation.

Glass mold polishing method and structure

A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25 atomic % using a low temperature wafer bonding technique is described. The wafer bonding process described in the present application includes an initial prebonding annealing step that is capable of forming a bonding interface comprising elements of Si, Ge and O, i.e., interfacial SiGeO layer, between a SiGe layer and a low temperature oxide layer. The present invention also provides the SGOI substrate and structure that contains the same.

Method of creating defect free high Ge content (&#x3e;25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques

The present invention provides a method for forming a self-aligned Ni alloy silicide contact. The method of the present invention begins by first depositing a conductive Ni alloy with Pt and optionally at least one of the following metals Pd, Rh, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W or Re over an entire semiconductor structure which includes at least one gate stack region. An oxygen diffusion barrier comprising, for example, Ti, TiN or W is deposited over the structure to prevent oxidation of the metals. An annealing step is then employed to cause formation of a NiSi, PtSi contact in regions in which the metals are in contact with silicon. The metal that is in direct contact with insulating material such as SiOand SiNis not converted into a metal alloy silicide contact during the annealing step. A selective etching step is then performed to remove unreacted metal from the sidewalls of the spacers and trench isolation regions.

Method of creating defect free high Ge content (&#x3e; 25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques

Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.

Slurry for mechanical polishing (CMP) of metals and use thereof

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Croton on Hudson, NY, United States of America

Michael A Cobb