International Business Machines Corporation

Micah S Galland

Terence B Hook

James Albert Slinkman

Peter Anton Habitz

Eric Adler

Judith H McCullen

Steven Eugene Washburn

Serge Biesemans

Eric S Phipps

A process is provided for determining the effects of scattering from the edge of a resist during a doping process. Edges of a resist which has been patterned to create an n-well are simulated and individually stepped across a predetermined region in predetermined step sizes. The step sizes may vary from step to step after each step, the scattering effects due to the resist edge at its particular location is determined. A resist of virtually any shape may be divided into its component edges and each edge may be individually stepped during the process.

Method of determining n-well scattering effects on FETs

A method for calibrating a software model for a given structure of interest for a variable imposed by an adjacent structure. First determine the spatial extent of the variable imposed by the adjacent structure. Then assign a value to the spatial extent, which varies as a function of distance from the adjacent structure to the given structure. Finally, attach that value to the model of the given structure.

Device modeling for proximity effects

A method and apparratus for for identifying circuits within an integrated circuit design that are likely to latchup. The present invention accomplishes the identification by searching for suspect circuits and then modifying these circuits to represent a device known by an EDA tool (e.g. FET device). The EDA tool can then be used to determine the likelihood of latchup occuring based upon the modified device.

Method and apparatus for detecting devices that can latchup

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Essex Junction, VT, United States of America

Micah S Galland