Western Digital (fremont), Inc.

Miao Wang

Ming Mao

Hai Sun

Wei Gao

Guanxiong Li

Lingyun Miao

Anup Roy

Zhihong Zhang

Wei Zhang

Tong Zhao

Chih-Ching Hu

Dujiang Wan

Guanghong Luo

Xiaoyu Yang

Ling Wang

Wencheng Su

James Yuan

Disclosed are methods for making ultra-narrow track width (TW) read sensors, and read transducers incorporating such sensors. The methods utilize side-wall line patterning techniques to prepare ultra-narrow mill masks that can be used to prepare the ultra-narrow read sensors.

Method for making ultra-narrow read sensor and read transducer device resulting therefrom

A first layered structure includes a magnetic layer, a first hard mask layer, a second hard mask layer, and a first stepping layer. The first stepping layer is etched through to create a sidewall. A mask-width definition layer is deposited on and adjacent to the sidewall, until a mask-width definition layer thickness is achieved adjacent to the sidewall. The mask-width definition layer is removed except on the sidewall. The first stepping layer is removed. The second hard mask layer is etched away, except for a remainder of the second hard mask layer beneath the mask-width definition layer. The first hard mask layer is etched away around the remainder of the second hard mask layer, to form a dual layer hard mask comprising the remainder of the second hard mask layer and the remainder of the first hard mask layer. The magnetic layer is ion milled around the dual hard mask.

Method to fabricate a magnetic head including ion milling of read gap using dual layer hard mask

Disclosed are methods for making read sensors using developable bottom anti-reflective coating and amorphous carbon (a-C) layers as junction milling masks. The methods described herein provide an excellent chemical mechanical polishing or planarization (CMP) stop, and improve control in reader critical physical parameters, shield to shield spacing (SSS) and free layer track width (FLTW).

Reader fabrication method employing developable bottom anti-reflective coating

Innovative techniques are disclosed for fabricating microelectronic devices using an alternating phase shift mask. Some embodiments of the invention encompass a double exposure technique that utilize high resolution line patterning such that two opaque lines intersect at an angle. After development, substantially circular images may be formed. In certain embodiments, high resolution disk imaging as small as 60 nm is possible.

Double exposure technique for high resolution disk imaging

A read sensor for a transducer is fabricated. The transducer has a field region and a sensor region corresponding to the sensor. A sensor stack is deposited. A hybrid mask including hard and field masks is provided. The hard mask includes a sensor portion covering the sensor region and a field portion covering the field region. The field mask covers the field portion of the hard mask. The field mask exposes the sensor portion of the hard mask and part of the sensor stack between the sensor and field regions. The sensor is defined from the sensor stack in a track width direction. Hard bias layer(s) are deposited. Part of the hard bias layer(s) resides on the field mask. Part of the hard bias layer(s) adjoining the sensor region is sealed. The field mask is lifted off. The transducer is planarized.

Method for fabricating a read sensor for a read transducer

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San Jose, CA, United States of America

Miao Wang