Google Inc.

Nanosys, Inc.

Glo Ab

Miao-Chan Tsai

Benjamin Leung

Fariba Danesh

Richard Peter Schneider, Jr

Gang He

Michael Joseph Cich

Richard P Schneider, Jr

Tsun Yin Lau

Max Batres

Sheila Hurtt

Zulal Tezcan Ozel

Zulal Tezcan

The disclosure describes various aspects of strain management layers for light emitting elements such as light-emitting diodes (LEDs). The present disclosure describes an LED structure formed on a substrate and having a strain management region supported on the substrate, and an active region configured to provide a light emission associated with the LED structure. The strain management region includes a first layer including a superlattice having a plurality of repeated first and second sublayers, and a second layer including a bulk layer. In an embodiment, at least one of the first and second sublayers and the bulk layer includes a composition of InAlGaN. A device having multiple LED structures and a method of making the LED structure are also described.

Combination of strain management layers for light emitting elements

The disclosure describes various aspects of using optical elements monolithically integrated with light-emitting diode (LED) structures. In an aspect, a light emitting device includes a single LED structure having an active region and a single optical element disposed on the LED structure and configured to collimate and steer light emitted by the LED structure. One or more additional optical elements may also be disposed on the LED structure. In another aspect, a light emitting device may include multiple LED structures and a single optical element disposed on the multiple LED structures and configured to collimate and steer light emitted by the multiple LED structures. For each of these aspects, the LED structure(s) and the optical element(s) are made of a material that includes GaN, the LED structure(s) has a corresponding active region, and the LED structure(s) has a corresponding reflective contact disposed opposite to the optical element(s).

Light-emitting diodes with integrated optical elements

A light emitting diode (LED) structure includes a semiconductor template having a template top-surface, an active quantum well (QW) structure formed over the semiconductor template, and a p-type layer. The p-type layer has a bottom-surface that faces the active QW and the template top-surface. The bottom-surface includes a recess sidewall. The recess sidewall of the p-type layer is configured for promoting injection of holes into the active QW structure through a QW sidewall of the active QW structure.

Quantum well-based LED structure enhanced with sidewall hole injection

A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.

Light emitting diodes formed on nanodisk substrates and methods of making the same

A method of forming a light emitting device includes forming a growth mask layer including openings on a doped compound semiconductor layer, forming first light emitting diode (LED) subpixels by forming a plurality of active regions and second conductivity type semiconductor material layers employing selective epitaxy processes, and transferring each first LED subpixel to a backplane. An anode contact electrode may be formed on the second conductivity type semiconductor material layers for redundancy. The doped compound semiconductor layer may be patterned with tapered sidewalls to enhance etendue. An optically clear encapsulation matrix may be formed on the doped compound semiconductor material layer to enhance etendue. Lift-off processes may be employed for the active regions. Cracking of the LEDs may be suppressed employing a thick reflector layer.

Etendue enhancement for light emitting diode subpixels

Growing community of inventors

Sunnyvale, CA, United States of America

Miao-Chan Tsai