Basf Se Corporation

Clap Co., Ltd.

National University of Singapore

Flexterra, Inc.

Mi Zhou

Stefan Becker

Ashok Kumar Mishra

Emmanuel Martin

Thomas Weitz

Hiroyoshi Noguchi

Iori Doi

Fulvio G Brunetti

Chongjun Jiao

JunMin Lee

Giseok Lee

Wei Hsiang Lin

Konrad Knoll

Marcel Kastler

Hans Jürg Kirner

Lay-Lay Chua

Florian Doetz

Daniel Kaelblein

Subramanian Vaidyanathan

Jordan Thomas Kopping

Chao Wu

Yucui Guan

Florian Dötz

Bertha Tan

Raissa Nathania Santoso

Mei Shan Lam

Peter K-h Ho

Png Rui-Qi

Jiao Chongjun

Wei-Ling Seah

Ang Sweemeng

Raimond Praptana

Doi Iori

The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer block B is attached to the polymer block A, and wherein at least 60 mol % of the repeat units of polymer block B are selected from the group consisting of Formulas (1A), (1B), (1C), (1D), (1E) and (1F), wherein R, R, R, R, R, R, Rand Rare independently and at each occurrence H or C-C-alkyl.

Patterning method for preparing top-gate, bottom-contact organic field effect transistors

The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer block B is attached to the polymer block A, and wherein at least 60 mol % of the repeat units of polymer block B are selected from the group consisting of Formulas (1A), (1B), (1C), (1D), (1E) and (1F), wherein R, R, R, R, R, R, Rand Rare independently and at each occurrence H or C-C-alkyl. 

This invention provides a transistor device structure that incorporates a self-aligned doped contact formed by inserting a molecularly-thin layer of bonded anions between the semiconductor and the source-drain electrode array wherein the semiconductor is p-doped at the interface with the bonded-anion layer, and a method of making this structure using oxidant species incorporated into the molecularly-thin layer. The device shows ohmic hole injection and hole extraction at the contacts to give high-performance transistor characteristics with low contact resistance.

Organic field-effect-transistors with low contact resistance

Polymers comprising at least one unit of formula (1) wherein n is 0 or 1, m and p are independently from each other 0, 1, 2, 3, 4, 5 or 6, provided that the sum of n, m and p is at least 2, and n and p are not 0 at the same time, Arand Arare independently from each other C-arylene or C-aryl, which may be substituted with 1 to 4 substituents independently selected from the group consisting of C-alkyl, C-alkenyl, C-alkynyl, C-cycloalkyl, C-aryl and 5 to 14 membered heteroaryl, and X, Xand Xare independently from each other and at each occurrence O or S, compositions comprising these polymers, and electronic devices comprising a layer formed from the compositions. Preferably, the electronic device is an organic field effect transistor and the layer is the dielectric layer. 

Ether-based polymers as photo-crosslinkable dielectrics

A method for producing an organic semiconductor device () having at least one organic semiconducting material () and at least two electrodes () adapted to support an electric charge carrier transport through the organic semiconducting material () is disclosed. The organic semiconducting material () intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer () which at least partially is interposed between the organic semiconducting material () and at least one of the electrodes () of the organic semiconductor device (). The intermediate layer () comprises at least one thiol compound having the general formula HS&#x2014;R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer () an ambipolar charge carrier transport between the electrodes () is suppressed in favor of a unipolar charge carrier transport.

Method for producing an organic semiconductor device

The present invention provides compounds of formula a process for their preparation, a solution comprising these compounds, a process for the preparation of a device using the solution, devices obtainable by the process and the use of the bis-azide-type compounds as cross-linkers.

Azide-based crosslinking agents

The present invention provides compounds of formula (1) wherein o is 1, 2 or 3, p is 0, 1 or 2, n is 0, 1 or 2, m is 0, 1 or 2, and A is a mono- or polycyclic ring system, which may contain at least one heteroatom, and an electronic device comprising the compounds as semiconducting material. 

Heteroacene compounds for organic electronics

The present invention provides a polymer comprising a unit of formula, wherein

Semiconducting materials based on naphthalenediimide-vinylene-oligothiophene-vinylene polymers

Phenacene compounds of formula (I) are disclosed. All the variables in the formula are the same as defined in the description. A thin film semiconductor comprising the above compounds, and a field effect transistor device, a photovoltaic device, an organic light emitting diode device and a unipolar or complementary circuit device comprising the thin film are also disclosed. 

Phenacene compounds for organic electronics

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Singapore, Singapore

Mi Zhou