Hyundai Electronics Industries Co. Ltd.

Other

Mi Young Kang

Gon Son

Jin Ki Jung

Won G Lee

The present invention relates to a device for preventing sudden acceleration of an automobile that is installed in a power transmission structure disposed between a throttle valve and a motor for the throttle valve in the automobile, such that if the motor is activated by an electrical error at a state where an accelerator pedal is not depressed by a driver, the power generated from the motor is not transmitted to the throttle valve. The device for preventing sudden acceleration of an automobile fitted with an automatic transmission according to the present invention is configured wherein even though a motor opening and closing a throttle valve is activated by an electrical error at a state where an accelerator pedal is not depressed by a driver, the power generated from the motor is not transmitted mechanically to the throttle valve, thereby preventing casualty caused by sudden acceleration.

Device for preventing sudden acceleration of automobile

A method for forming a via hole in multiple metal layers of the semiconductor device is disclosed. In a via hole forming process of the semiconductor device, a barrier layer is formed beneath the photoresistive layer. Accordingly, the polymer residue formed on the metal-layer pattern and side wall of the via hole is prevented during the plasma etching process.

Method for forming via hole in multiple metal layers of semiconductor

A method of forming a contact hole in a semiconductor device while maintaining intended electrical isolation of electrical conductive material layers, even in the presence of mask misalignment/excessive etching which may occur during the fabrication process of the contact hole and the resulting device are disclosed. The method comprises the formation of an etch barrier layer to provide an isotropic etching barrier and an electrically insulating layer for the conductive material layers which are positioned proximate the contact hole. Thus, when the contact hole is formed by anisotropically etching to expose the surface of the diffusion region an electrical short cannot occur between conductive material layers proximate the contact hole and conductive material which is deposited into the contact hole.

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Seoul, South Korea

Mi Young Kang