Samsung Electronics Co., Ltd.

Mi-Youn Kim

Yong-Tae Kim

Yun-Gi Kim

Dae-Won Ha

Gyo-young Jin

Sung-Sam Lee

Young-Soo Kim

Hye-Soo Shin

Joon-Sung Kim

A method of fabricating a semiconductor device may include: alternatively stacking dielectric layers and conductive layers on a substrate to form a stack structure, forming a first photoresist pattern on the stack structure, forming a second photoresist pattern whose thickness is reduced as the second photoresist pattern extends from the center of the stack structure towards a periphery of the stacked structure by performing a heat treatment on the first photoresist pattern, etching the stack structure through the second photoresist pattern to form a slope profile on the stack structure whose thickness is reduced as the slope profile extends from the center of the stack structure towards a periphery of the stacked structure, and forming a step-type profile on the end part of the stack structure by selectively etching the dielectric layer.

Method of manufacturing semiconductor device

A semiconductor device capable of suppressing void migration is provided. The semiconductor device includes a dummy region extending in a first direction substantially perpendicular to a second direction in which a word line extends. In addition, an isolation layer pattern may not cut the dummy region in the second direction. Consequently, leaning of the dummy region and void migration are prevented. A method of fabricating the semiconductor device is also provided.

Semiconductor device and method of manufacturing the same

Method of manufacturing a semiconductor device having a switching function

Growing community of inventors

Gyeonggi-do, South Korea

Mi-Youn Kim