Samsung Electro-Mechanics Co., Ltd.

Mi Yang Kim

Seok Hyun Yoon

In Ho Jeon

Jin Woo Kim

Suk Jin Ham

Se Yoon Park

Hee Suk Chung

Kyung Ho Lee

Hyung Soon Kwon

Dong Hun Kim

Yun Jung Park

Jung Deok Park

Byung Kil Yun

Bon Hyeong Koo

Min Jung Jang

Gyu Sik Kim

Jin Uk Cha

Gyu Seok Kim

Eun Ju Yang

Han Wool Kang

Byung Ho Lee

A ceramic electronic component includes a body including a dielectric layer and an internal electrode disposed alternately with the dielectric layer; and an external electrode disposed on the body, wherein the dielectric layer includes a first region extending from an interfacial surface with the internal electrode to 50 nm of the dielectric layer in an inward direction and a second region excluding the first region, and wherein, in the first region, an average content of In based on overall elements excluding oxygen is 0.5 at % or more and 2.0 at % or less, and an average content of Sn based on overall elements excluding oxygen is 0.5 at % or more and 1.75 at % or less.

Ceramic electronic component and method of manufacturing the same

A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body, wherein the dielectric layer includes a rare earth element, a secondary phase of the rare earth element and a dielectric grain, wherein, when an average thickness of the dielectric layer is defined as td and a maximum size of the dielectric layer of a secondary phase of the rare earth element in the thickness direction is defined as D, the dielectric layer includes two or more secondary phases of a rare earth element satisfying D/td≤0.2.

Multilayer electronic component

A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body, wherein the dielectric layer includes a plurality of dielectric grains, and wherein the plurality of dielectric grains include one or more first dielectric grains in which a sum of lengths of defects in a dielectric grain is 150 nm or more.

Multilayer electronic component and method of manufacturing the same

A dielectric ceramic composition and a multilayer ceramic electronic component are provided, the dielectric ceramic composition includes a barium titanate base material main component and a subcomponent, a microstructure after sintering includes a first crystal grain including 3 or less domain boundaries and a second crystal grain including 4 or more domain boundaries, and an area ratio of the second crystal grain to the total crystal grains is 20% or less.

Dielectric ceramic composition and multi-layer ceramic electronic component using the same

There is provided an In nanowire including a substrate, an indium thin film formed on the substrate, an insulating film formed on the indium thin film and having at least one through hole through formation of a pattern, and an In nanowire vertically protruded from the indium thin film through the at least one through hole.

In nanowire, device using the same and method of manufacturing in nanowire

Disclosed herein are a printed circuit board and a method of manufacturing the same. In detail, according to a preferred embodiment of the present invention, the printed circuit board includes: an insulating layer; and a metal layer formed on the insulating layer, wherein in the metal layer, a ratio occupied by crystal orientations of (110) and (112) is 20 to 80%. By doing so, the preferred embodiment of the present invention provides a printed circuit board including the metal layer having different crystal orientations to minimize factors of hindering electrical characteristics such as electric conductivity and improve isotropy of mechanical properties and a method of manufacturing the printed circuit board.

Printed circuit board and method of manufacturing the same

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Suwon-si, South Korea

Mi Yang Kim