Samsung Electronics Co., Ltd.

Mi-So Hwang

Soon-Moon Jung

Jae-Hun Jeong

Han-soo Kim

Jae-hoon Jang

Jun-Beom Park

Jong-In Yun

A stack-type semiconductor device and a method of manufacturing the same are provided. The stack-type semiconductor device includes an insulation layer on a single-crystalline substrate, a contact plug penetrating the insulation layer to contact the single-crystalline substrate, an upper semiconductor pattern including an impurity region and a gate structure positioned between the impurity regions on the upper semiconductor pattern. An upper surface of the contact plug contacts a lower surface of the semiconductor pattern. An operation failure of the stack-type semiconductor device is reduced since the upper semiconductor pattern is electrically connected to the single-crystalline semiconductor substrate.

Growing community of inventors

Seoul, South Korea

Mi-So Hwang