Skhynix Inc.

Mi Seong Park

Jung Shik Jang

Won Geun Choi

In Su Park

Dong Hun Lee

Jang Won Kim

Jeong Hwan Kim

Jung Dal Choi

A semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device including a stacked body including conductive patterns and insulating patterns that are alternately stacked, a filling layer configured to pass through the stacked body, a first channel layer configured to pass through the stacked body and coupled to the filling layer, a second channel layer configured to pass through the stacked body and coupled to the filling layer, a first interposed layer configured to pass through the stacked body and disposed between the first channel layer and the filling layer, a second interposed layer configured to pass through the stacked body and disposed between the second channel layer and the filling layer, and a memory layer surrounding the filling layer, the first and second channel layers, and the first and second interposed layers.

Semiconductor device and method of manufacturing the semiconductor device

A semiconductor device includes a gate structure including conductive layers and insulating layers alternately stacked with each other, channel structures passing through the gate structure and arranged in a first direction, a cutting structure extending in the first direction and passing through the channel structures, and a first slit structure passing through the gate structure and extending in a second direction crossing the first direction.

Semiconductor device with improved cell density and manufacturing method of the semiconductor device

A semiconductor memory device and a method of manufacturing the semiconductor memory device are provided. The semiconductor memory device includes a gate stacked structure with a cell array region and a contact region with a stepped shape, and a roughness of a first sidewall of the cell array region is greater than that of a second sidewall of the contact region.

Three-dimensional semiconductor memory device

There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a first gate stack structure and a second gate stack structure, disposed on a substrate; and a slit disposed between the first gate stack structure and the second gate stack structure to electrically isolate the first gate stack structure and the second gate stack structure from each other.

Memory device and manufacturing method of the memory device

A method of manufacturing a semiconductor device is provided. The method may include forming a stack, forming a preliminary stepped structure by patterning the stack, forming a first stepped structure, a second stepped structure, and an opening located between the first stepped structure and the second stepped structure by etching the preliminary stepped structure, forming a passivation layer that fills the opening and covers the first stepped structure, and forming a third stepped structure by etching the second stepped structure using the passivation layer as an etching barrier.

Growing community of inventors

Icheon-si, South Korea

Mi Seong Park