Samsung Electronics Co., Ltd.

Mi-seon Park

Bon-Young Koo

Gi-Gwan Park

Yong-Suk Tak

Ki-Yeon Park

Tae-Jong Lee

Hyun-seung Kim

A device includes: a gate line on an active region of a substrate, a pair of source/drain regions in the active region on both sides of the gate line, a contact plug on at least one source/drain region out of the pair of source/drain regions; and a multilayer-structured insulating spacer between the gate line and the contact plug. The multilayer-structured insulating spacer may include an oxide layer, a first carbon-containing insulating layer covering a first surface of the oxide layer adjacent to the gate line, and a second carbon-containing insulating layer covering a second surface of the oxide layer, opposite to the first surface of the oxide layer, adjacent to the contact plug.

Growing community of inventors

Daegu, South Korea

Mi-seon Park