Samsung Electronics Co., Ltd.

Mi-ra Park

Hark-joon Kim

Seong-hoon Kang

Sang-il Lee

Min-kyu Jung

Young-ho Kim

Sang-Il Lee

Sung-bin Kuk

Kyoung-mi Kim

Youn-Kyung Wang

Jae-ho Kim

Seong-Hoon Kang

Jeong-ju Park

Bo-Hee Lee

Sung-Bin Kuk

A user terminal device and a control method are provided. The user terminal device includes a display, a sensor configured to sense a user interaction on the display, and a controller configured to, in response to a user interaction being sensed by the sensor of a touch being made by an input device of a polyhedral shape that includes different touch patterns on each of a plurality of surfaces, control a function of the user terminal device according to a touch pattern on a touched surface among the plurality of surfaces.

User terminal device and method for controlling the user terminal device thereof

A control device, a method of controlling the same, and an integrated control system are provided. The method includes in response to a setting command being input, registering a setting state of at least one device connected to the control device at a time point when the setting command is input as a preferred setting state of the at least one device, and, in response to an execution command being input, transmitting a control command to the at least one device based on the registered preferred setting state.

Control device, method of controlling the same, and integrated control system

A pointing device and a controlling method thereof are provided. The controlling method of the pointing device includes transmitting an identification signal to an external device that is targeted by the pointing device according to a user input, receiving a reflected signal that is generated by reflecting the identification signal from a reflective surface attached to a surface of the external device, and analyzing the reflected signal and identifying the external device.

Pointing device and controlling method thereof

A method of manufacturing a semiconductor device using a photolithography process may include forming an anti-reflective layer and a first photoresist film on a lower surface. The first photoresist film may be exposed to light and a first photoresist pattern having a first opening may be formed by developing the first photoresist film. A plasma treatment can be performed on the first photoresist pattern and a second photoresist film may be formed on the first photoresist pattern, which may be exposed to light. A second photoresist pattern may be formed to have a second opening by developing the second photoresist film. Here, the second opening may be substantially narrower than the first opening.

Methods of manufacturing semiconductor devices using photolithography

A siloxane polymer composition includes an organic solvent in an amount of about 93 percent by weight to about 98 percent by weight, based on a total weight of the siloxane polymer composition, and a siloxane complex in an amount of about 2 percent by weight to about 7 percent by weight, based on the total weight of the siloxane polymer composition, the siloxane complex including a siloxane polymer with an introduced carboxylic acid and being represented by Formula 1 below, wherein each of R, RR, and Rindependently represents H, OH, CH, CH, CH, CHor CH, R' represents CH, CH, CH, CH, CHor CH, and n represents a positive integer so the siloxane polymer of the siloxane complex has a number average molecular weight of about 4,000 to about 5,000.

Siloxane polymer composition

Siloxane polymer composition, method of forming a pattern using the same, and method of manufacturing a semiconductor using the same

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Seoul, South Korea

Mi-ra Park