Soongsil University

Mi Lim Lee

Chang Kun Park

Ga Yeon Ko

The present invention relates to a high frequency transformer for a differential amplifier. An exemplary embodiment of the present invention provides a high frequency transformer for a differential amplifier, including: a first metal line that is integrated and formed in an IC chip through a CMOS process and that is connected to a differential signal line of a transistor included in the IC chip; and a second metal line that is formed in an MEMS chip through an MEMS process and that is inductively coupled with the first metal line in a state spaced apart from an upper portion of the first metal line, wherein the MEMS chip may be stacked on an upper portion of the IC chip.

RF transformer for differential amplifier

The present invention related to a varactor used in an integrated circuit of a differential structure. An exemplary embodiment of the present invention provides a variable capacitor connected between first and second signal lines which are differential signal lines included in an integrated circuit of a differential structure, including: a plurality of N-type semiconductors separately arranged; one or more P-type semiconductors disposed between the N-type semiconductors to make first and second PN junctions with N-type semiconductors contacting upper and lower portions thereof and to receive a control voltage, wherein, among the N-type semiconductors, first N-type semiconductors corresponding to (2n&#x2212;1)-th (n being a positive integer) are connected with the first signal line, and second N-type semiconductors corresponding to 2n-th are connected with the second signal line, and parasitic capacitances of the first and second PN junctions are varied by adjusting the control voltage.

Variable capacitor used in integrated circuit of differential structure

An oscillator with a differential structure which is formed in an integrated circuit, including: a first transistor and a second transistor in each of which a drain electrode, a gate electrode, and a source electrode are sequentially arranged, a drain of the first transistor is connected with a gate of the second transistor through a first wiring, a drain of the second transistor is connected with a gate of the first transistor through a second wiring, and a first end of a source of the first transistor and a first end of a source of the second transistor are connected through a third wiring, and a second end of the source of the first transistor and a second end of the source of the second transistor are connected through a fourth wiring.

Growing community of inventors

Yangju-si, South Korea

Mi Lim Lee