Lg Display Co., Ltd.

Samsung Electronics Co., Ltd.

Mi-Kyung Park

Gee-Sung Chae

Tae-Young Chung

Ju-yong Lee

Joon-ho Sung

Sung-hee Kim

Jeong-Hwan Kim

Young-Wook Kim

Ki-Sul Cho

Ji-Su Han

Ki-Su Park

An organic light-emitting diode (OLED) display device includes a substrate; a light-emitting diode including a first electrode, an organic emitting layer and a second electrode and disposed on a first side of the substrate; and a foamed polymer layer disposed on a second side of the substrate and including a polymer resin and an air pocket inside the polymer resin.

Organic light-emitting diode display device

Provided are an organic light emitting display (OLED) device and method for manufacturing the same. The OLED device includes: a plurality of gate lines in one direction on a substrate, a plurality of light-shielding patterns corresponding to at least parts of peripheries of the respective pixel regions on the substrate, the light-shielding patterns spaced apart from the gate lines, at least one insulating film covering the substrate, the gate lines, and the light-shielding patterns, a plurality of data lines in another direction crossing the gate lines on the insulating film to define the pixel areas, a passivation film covering the insulating film and the data lines, a plurality of color filters in the pixel areas on the passivation film, an over-coating film evenly covering the passivation film and covering the color filters, and a plurality of organic light emitting elements in the pixel areas on the over-coating film.

Organic light emitting display device comprising light-shielding patterns and method for manufacturing the same

A thin film transistor includes: a silicon nanowire on a substrate, the silicon nanowire having a central portion and both side portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode spaced apart from the source electrode on the both side portions, the source electrode and the drain electrode electrically connected to the silicon nanowire, respectively.

Thin film transistor method of fabricating the same

Thin film transistor and method of fabricating the same

An organic light emitting diode display device and a method of fabricating the same, the method comprising: forming a first electrode on a substrate; forming a hydrophilic partition wall having a plurality of openings on the first electrode; forming hydrophobic red, green and blue organic light emitting layers on the plurality of openings of the partition wall, respectively; and forming a second electrode on each of the hydrophobic red, green and blue organic light emitting layers, whereby thin films can be selectively formed by a surface treatment so as to improve color impurity at boundaries of red, green and blue patterns.

Organic light emitting diode display device and method of fabricating the same

A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit.

Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.

Growing community of inventors

Annyang-si, South Korea

Mi-Kyung Park