Samsung Electronics Co., Ltd.

Mi Kyoung Jang

Dae-Kyu Park

Dong Gi Lee

Jin-Hyuk Lee

Han Bin Yoon

Jinhyuk Kim

Han-Chan Jo

A method is provided for writing data in a storage device, including a nonvolatile memory. The method includes receiving a pre-write command including a logical address and size information of write data, performing a pre-operation for optimization of a write operation based on the pre-write command, and writing the write data in the nonvolatile memory after the pre-operation is completed.

Data storage device and method of writing data in the same

The non-volatile memory system includes a non-volatile memory and a controller. The non-volatile memory includes a data region including a sector region for storing sector data, and an uncorrectable information region for storing uncorrectable sector information on the sector region. The controller includes an information generation unit for generating the uncorrectable sector information that indicates whether the sector region is assigned to an uncorrectable sector region, according to a command output from a host.

Non-volatile memory device with uncorrectable information region and operation method using the same

A data retention method that includes sampling a plurality of nonvolatile memory devices included in a data storage device to detect retention information for each of the nonvolatile memory devices in response to a request of a host and outputting, from the data storage device to the host, sampling data based on a result of the sampling, determining, at the host, whether to perform a retention operation on each of the nonvolatile memory devices based on the sampling data, and performing the retention operation on each of the nonvolatile memory devices based on a result of the determination.

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Seoul, South Korea

Mi Kyoung Jang