Samsung Electronics Co., Ltd.

Mi Jeong Yun

Jong Sup Song

Sang Yeob Song

Chan Mook Lim

Ji Hoon Yun

Soo Hwan Lee

Myeong Ha Kim

Sergiy Shylo

Masaaki Sofue

Saesil Kim

A semiconductor light-emitting device includes: a package substrate having a mounting surface on which a first circuit pattern and a second circuit pattern are disposed; a semiconductor LED chip mounted on the mounting surface, having a first surface which faces the mounting surface and on which a first electrode and a second electrode are disposed, a second surface opposing the first surface, and side surfaces located between the first surface and the second surface, the first electrode and the second electrode being connected to the first circuit pattern and the second circuit pattern, respectively; a wavelength conversion film disposed on the second surface; and a side surface inclined portion disposed on the side surfaces of the semiconductor LED chip, providing inclined surfaces, and including a light-transmitting resin containing a wavelength conversion material.

Semiconductor light-emitting device

An optical device may include a first surface having a shape of a quadrangle; and a second surface disposed to be opposite to the first surface and comprising a convex curved surface. The optical device has an aspherical shape in a cross-section taken along a diagonal direction of the quadrangle and has a semicircular shape in a cross-section taken along a direction connecting a central portion of a first side of the quadrangle and a central portion of a second side opposite to the first side of the quadrangle. In a cross-sectional view of the optical device, the second surface is continuously varied between the semicircular shape of the cross-section and the aspherical shape of the cross-section.

Optical device and light emitting device package including the same

A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

A light emitting diode (LED) chip package including: a package body; an LED chip mounted on the package body and emitting an excited light; a phosphor layer including a phosphor absorbing the excited light and emitting a wavelength conversion light obtained by converting a wavelength of the excited light and a phosphor resin mixed with the phosphor; and a reflector layer including a reflector formed between the LED chip and the phosphor layer, transmitting the excited light to the phosphor layer, and reflecting the wavelength conversion light from the phosphor layer, and a reflector resin mixed with the reflector.

Growing community of inventors

Suwon-si, South Korea

Mi Jeong Yun