Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Yonsei University

Mi-Jeong Kim

Haeng Deog Koh

In Taek Han

Seong-Jun Jeong

Youn Jung Park

June Huh

Jae-Won Jeong

Woon-Ik Park

Yeon-Sik Jung

A nano-structured block copolymer that includes a self-assembled block copolymer disposed on a substrate, wherein the block copolymer includes a plurality of block structural units, and at least two block structural units have a solubility parameter difference of greater than or equal to about 5 megaPascal.

Nano-structure of block copolymer and method of manufacturing the same

A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r, and the inner apex having a second curvature radius r, respectively, and the width of the patterning area W, the first curvature radius rand the second curvature radius r, satisfy Inequation 1: 

Method of patterning block copolymer layer and patterned structure

A method of patterning a block copolymer layer, the method including:

Methods of patterning block copolymer layers and patterned structures

A method of patterning a block copolymer layer includes: providing a guide pattern on a surface of a substrate, the guide pattern including sidewalls each elongated in a longitudinal direction and spaced apart from each other, a trench defined by a bottom surface and facing surfaces of the sidewalls, and having a uniform width over an entire length thereof in the longitudinal direction, and a latitudinal wall perpendicular to the longitudinal direction of the trench; providing a block copolymer layer on the surface of the substrate; and annealing the block copolymer to cause self-assembly of the block copolymer and to direct the same in the trench. The block copolymer has a microphase-separation into anisotropic discrete domains aligned with a period &#x3bb;in the trench by the annealing.

Methods of patterning block copolymer layers

Growing community of inventors

Hwaseong-si, South Korea

Mi-Jeong Kim