Lg Electronics Inc.

Samsung Electronics Co., Ltd.

Futurechem Co., Ltd

Mi Hyun Kim

Byung Jin Kim

Kang Soo Seo

Sung Wan Park

Jea Yong Yoo

Jang Hui Cho

Soung Hyun Um

Sung Ryun Cho

Sam Mook Kang

Young Jo Tak

Young Hwan Park

Joo Sung Kim

Jun Youn Kim

Jong Uk Seo

Young Soo Park

Hyung Sun Kim

Dong Hoon Lee

Yong Jin Lee

Je Won Kim

Sung Hyun Sim

Jin Bock Lee

Min Hwan Kim

Hye Seok Noh

Geon Wook Yoo

Dae Yoon Chi

Sang Moo Lim

Kyo Chul Lee

Dong Kuk Lee

Byoung Se Lee

So Young Chu

Hyeon Jin Jeong

Ji Ae Park

Woon Jung Jung

Misaichi Takeuchi

Ran Ji Yoo

Jang Hul Cho

Sang Ryun Cho

Kang Soo 606-503 Chowon Hanyang Apt 897-5 Seo

Byung Jin 111-204 Hansol Chungu Apt Kim

The present invention relates to an 18F-labelled compound, and a use thereof. The compound selectively binds to a prostate-specific membrane antigen (PSMA), and enables the acquisition of clear prostate cancer images in a short time when used in positron emission tomography (PET).

18F-labelled compound for prostate cancer diagnosis, and use thereof

An ultraviolet semiconductor light emitting device includes a semiconductor stack, a trench, a filling insulator, and first and second electrodes. The semiconductor stack includes first and second conductivity-type semiconductor layers and an active layer therebetween that includes an AlGaN semiconductor material. The trench extends through the second conductivity-type semiconductor layer and the active layer to the first conductivity-type semiconductor layer and has a first width. The filling insulator fills the trench such that the filling insulator extends at least through the active layer in the trench and includes of an insulating material having a particular refractive index. The first electrode is connected to the first conductivity-type semiconductor layer, and the second electrode is connected to the second conductivity-type semiconductor layer.

Ultraviolet semiconductor light emitting devices

A semiconductor light emitting device includes a light emitting stack including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a plurality of holes through the second conductive semiconductor layer and the active layer, a trench extending along an edge of the light emitting stack, the trench extending through the second conductive semiconductor layer and the active layer, and a reflective metal layer within the plurality of holes and within the trench.

Semiconductor light emitting device

A light emitting device package includes a package substrate and a submount on the package substrate. An upper surface of the submount includes a central region, first and second base regions spaced from the package substrate, relative to the central region, and a sloped region between the central region and the first and second base regions. A light emitting device chip is in the central region. A first electrode layer is between the central region and the light emitting device chip and extends onto the sloped region and the first base region. A second electrode layer is between the central region and the light emitting device chip, extends onto the sloped region and the second base region, and is spaced apart from the first electrode layer. First and second reflective layers are on the first and second electrode layers, respectively, and overlap the sloped region.

Light emitting device package

A method of manufacturing a gallium nitride substrate, the method including forming a first buffer layer on a silicon substrate such that the first buffer layer has one or more holes therein; forming a second buffer layer on the first buffer layer such that the second buffer layer has one or more holes therein; and forming a GaN layer on the second buffer layer, wherein the one or more holes of the first buffer layer are filled by the second buffer layer.

Manufacturing method of gallium nitride substrate

An ultraviolet light emitting device including a first conductivity-type AlGaN semiconductor layer; an active layer disposed on the first conductivity-type AlGaN semiconductor layer and having an AlGaN semiconductor; a second conductivity-type AlGaN semiconductor layer disposed on the active layer and having an upper surface divided into a first region and a second region; second conductivity-type nitride patterns disposed on the first region of the second conductivity-type AlGaN semiconductor layer and having an energy band gap that is smaller than an energy band gap of the second conductivity-type AlGaN semiconductor layer; a transparent electrode layer covering the second conductivity-type nitride patterns and the second region of the second conductivity-type AlGaN semiconductor layer; a light-transmissive dielectric layer disposed on the transparent electrode layer between the second conductivity-type nitride patterns; and a metal electrode disposed on the transparent electrode layer overlying the second conductivity type nitride patterns and on the light-transmissive dielectric layer.

Ultraviolet light emitting devices having a dielectric layer and a transparent electrode layer disposed in between patterned nitride semiconductor layers

A method of manufacturing a nitride semiconductor substrate includes providing a silicon substrate having a first surface and a second surface opposing each other, growing a nitride template on the first surface of the silicon substrate in a first growth chamber, in which a silicon compound layer is formed on the second surface of the silicon substrate in a growth process of the nitride template, removing the silicon compound layer from the second surface of the silicon substrate, growing a group III nitride single crystal on the nitride template in a second growth chamber, and removing the silicon substrate from the second growth chamber.

Method of manufacturing nitride semiconductor substrate

A method of manufacturing a semiconductor substrate may include forming a first semiconductor layer on a growth substrate, forming a second semiconductor layer on the first semiconductor layer, forming a plurality of voids in the first semiconductor layer by removing portions of the first semiconductor layer that are exposed by a plurality of trenches in the second semiconductor layer, forming a third semiconductor layer on the second semiconductor layer and covering the plurality of trenches, and separating the second and third semiconductor layers from the growth substrate. on the first semiconductor layer. The third semiconductor layer are grown from the second semiconductor layer and extend above the second semiconductor layer.

Method of manufacturing semiconductor substrate including separating two semiconductor layers from a growth substrate

A method and an apparatus for retrieving information for managing video data involving link information associating metadata with the video data. A metadata indicator is used to indicate that metadata exists in a stream with the linking information. Link information also associates the metadata with location information to identify where additional information on the video data, which is described by the metadata, may be found. Using the method or apparatus, a single metadata unit is able to be associated with a plurality of video data units, or a plurality of metadata units are able to be associated with a single video data unit, in order to provide more information on the video data.

Recording medium containing moving picture data and additional information thereof and reproducing method and apparatus of the recording medium

A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer layer, the plurality of openings penetrating through the buffer layer and being spaced apart from one another; forming a plurality of cavities on the growth substrate, the plurality of cavities being aligned to respectively correspond to the plurality of openings; growing a semiconductor layer on the buffer layer, the growing the semiconductor layer including filling the plurality of openings with the semiconductor layer; and separating the buffer layer and the semiconductor layer from the growth substrate, wherein a diameter of each of the plurality of openings at a boundary between the growth substrate and the buffer layer is smaller than a diameter of each of the plurality of cavities at the boundary.

Method of manufacturing semiconductor substrate and substrate for semiconductor growth

A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.

Nanostructure semiconductor light emitting device

The present invention relates to a recording medium containing moving picture data and additional information thereof and to reproducing method and apparatus of the recording medium. The present recording medium has script files including additional information about moving picture data, e.g., scene descriptive text and introduction of characters, etc. In addition, information linking each script file with a section of moving picture data to be presented with contents of the script file is included in a link data file or is contained in a filename of the script file. In reproduction of the recording medium, a script file linked with presently reproduced moving picture data section is determined and searched for based on the link data file or every filename of the script files, and contents of the found script file are presented together with the presently reproduced moving picture data. Furthermore, previously presented additional information is removed depending on data or filename of the found script file.

Method and apparatus for retrieving metadata for managing video data

Growing community of inventors

Seoul, South Korea

Mi Hyun Kim