Skhynix Inc.

Mi Hyun Hwang

Chul Moon Jung

Soo Hwan Kim

Sang Kwon Lee

Jong Chern Lee

Jeong Jun Lee

Man Keun Kang

Yong Sun Kim

A memory device includes a fail test circuit configured to generate a fail flag indicating whether a failure was detected in a column line, on the basis of internal data outputted from the column line selected according to a column address, when performing a test, and control the fail flag to indicate that the failure was detected in the column line, on the basis of a fail control signal. The memory device also includes a repair information generation circuit configured to generate, from the column address, a repair column address for repairing the column line, on the basis of the fail flag.

Memory device performing repair operation

An apparatus includes a potential failure information generation circuit configured to generate potential failure inforrnation by detecting, based on first failure information on a first faded signal line and second failure information on a second faded signal line, whether the first failed signal line and the second faded signal line are adjacent to each other; and a flag generation circuit configured to generate a flag by comparing the potential failure information with redundancy repair information.

Apparatus for performing a repair operation

A memory device includes an at least one first normal mat and an at least one second normal mat, a first redundancy mat configured to provide one or more first redundancy column lines for repairing one or more column lines disposed in the at least one first normal mat, a second redundancy mat configured to provide one or more second redundancy column lines for repairing one or more column lines disposed in the at least one second normal mat, and a redundancy segmented input/output (I/O) line coupled to both of the first redundancy mat and the second redundancy mat.

Memory device including redundancy mats

A storage device for outputting a pattern for analyzing input data includes: a data receiver configured to sequentially receive a plurality of input data, each including a pattern for identifying data for a corresponding input period of a plurality of input periods; a pattern determiner configured to set, as a reference pattern, a pattern included in any one data among the plurality of input data, and generate a control signal based on whether correspondence data including the same pattern as the reference pattern is input; and a data storage configured to store the plurality of input data in a sequence in which the plurality of input data are input, and, when the correspondence data is stored, output capture data that are stored data including the correspondence data based on the control signal.

Controller and operating method thereof

A data output buffer may be provided. The data output buffer may include a pull-up circuit configured to output a pull-up feedback signal by pull-up driving an output node. The data output buffer may include a pull-up driver configured to output the pull-up drive signal by driving a pull-up signal, and selectively activate the pull-up drive signal based on the pull-up feedback signal. The data output buffer may include a pull-down circuit configured to output a pull-down feedback signal by pull-down driving the output node based on a pull-down drive signal. The data output buffer may include a pull-down driver configured to output the pull-down drive signal by driving a pull-down signal, and selectively activate the pull-down drive signal based on the pull-down feedback signal.

Data output buffer

A semiconductor system may include a first semiconductor device and a second semiconductor device. The first semiconductor device may output a clock signal, a test mode signal and command address signals. The second semiconductor device may repeatedly write and read out data into and from a plurality of memory cells sequentially selected by addresses that are sequentially counted or may repeatedly write and read out the data into and from specific memory cells selected by a specific address among the addresses, according to the clock signal and the command address signals in response to the test mode signal.

Cost effective semiconductor devices and semiconductor systems with reduced test time

A semiconductor device includes a decoded signal generation circuit suitable for executing a counting operation to generate a decoded signal in response to an oscillation signal during a refresh section, a refresh pulse generation circuit suitable for generating a refresh pulse for executing a refresh operation in response to the decoded signal and a temperature code, and a reset pulse generation circuit suitable for generating a reset pulse initializing the decoded signal in response to the refresh pulse.

Semiconductor device configured to generate a refresh pulse for executing a refresh operation in response to the decoded count signal and temperature code

The semiconductor memory device may include a power control signal generator and a sense amplifier circuit. The power control signal generator may generate a first power control signal in response to a detection signal generated from detecting a level of a power supply voltage signal. The sense amplifier circuit may generate a first power signal driven to have a first drive voltage in response to the first power control signal. The sense amplifier circuit may sense and amplify a level of a bit line using the first power signal as a power supply voltage.

Semiconductor devices and semiconductor systems including the same

A semiconductor memory device includes a bulk voltage generation circuit configured to interrupt driving of a bulk voltage in response to an exit signal which is generated in synchronization with a time at which a power-down mode is ended, and discharge charges of a first node from which the bulk voltage is outputted, in response to the exit signal; and an internal circuit including a MOS transistor which is supplied with the bulk voltage.

Semiconductor memory device including bulk voltage generation circuit

A programming circuit using an antifuse includes a fuse signal generation unit including an antifuse which connects a node with a low voltage in response to a test address when the node is driven to a level of a high voltage, and configured to output a signal of the node as a fuse signal in response to a test mode signal; and a programming signal generation unit configured to buffer the fuse signal in response to a power-up signal and generate a programming signal.

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Icheon-si, South Korea

Mi Hyun Hwang