Hynix Semiconductor Inc.

Skhynix Inc.

Sk Hynic Inc.

Mi Hye Kim

Jae Jin Lee

Dong Sook Chang

Duk Sun Han

A flash memory device includes an active region, drain contacts, a source contact line, and source contacts. The active regions are formed on a substrate extend at least from a source region to a drain region of the substrate. The drain contacts are formed over the active regions in the drain region. The source contact line is formed in the source region of the semiconductor substrate. The source contact line intersects the active regions and is continuously line-shaped. The source contact line includes source contacts formed at locations where the source contact line and the active regions intersect. The source contacts are zigzag-shaped and are separated from corresponding drain contacts by a given distance.

Flash memory device and mask for fabricating the same

A method for controlling uniformity of patterns formed in a semiconductor device includes obtaining simulation contours with respect to respective cases while controlling a size of an outermost pattern and determining a size of the outermost pattern in which uniform distribution values (3&#x3c3;) value of patterns included in the simulation contours satisfying specific conditions as a size of target outermost pattern.

Method for controlling pattern uniformity of semiconductor device

A data strobe signal output driver includes a trigger block, a predriver block, and a main driver block. The trigger block is configured to receive a first signal, a second signal, a first clock and a second clock, and to output a predrive signal based thereon. The predriver block is configured to receive the predrive signal, a driver off signal and a termination enable signal, and to output a first main drive signal and a second main drive signal based thereon. The main driver block is configured to output a data strobe signal based on the first and second main drive signals.

Data strobe signal output driver for a semiconductor memory apparatus

An integrated circuit includes a first ODT (On Die Termination) unit and an input buffer. The first ODT unit is configured to receive at least one pull-up code and at least one pull-down code and calibrate a resistance value for impedance matching of a first line transferring data. The input buffer is configured to buffer the data in response to a reference voltage level and drive input data. Herein, the driving of the input data is controlled in response to the pull-up code and the pull-down code.

Impedance calibration circuit and impedance calibration method

A differential amplifying device includes a first differential amplifying unit that receives an input signal and a reference voltage. The first differential amplifying unit amplifies the input signal to generate an output signal when a sensing signal is at a first level. A second differential amplifying unit is configured to also receive the input signal and the reference voltage. The second differential amplifying unit amplifies the input signal to generate the output signal when the sensing signal is at a second level. The first and second differential amplifying units are configured to take advantage of transistor characteristics.

Differential amplifying device

A semiconductor device stabilizes an operation of an input buffer. A semiconductor device includes an input potential detection unit, an input buffer, and a current sink unit. The input potential detection unit outputs a detection signal in response to a level of an input signal. The input buffer buffers the input signal by differentially amplifying the input signal through a first current sink unit. The current sink unit receives the detection signal, and in response to the detection signal, performs an auxiliary differential amplifying operation with respect to the input signal buffered by the input buffer.

Semiconductor device having input circuit minimizing influence of variations in input signals

An input buffer circuit is disclosed. The input buffer circuit includes a buffer configured to receive an input signal and differentially amplify and buffer the received input signal, and a current regulator for regulating the amount of current in the buffer at a turn-on level which depends on a level of a voltage inputted thereto.

Input buffer circuit

A semiconductor device minimizes generation of an output signal skew of an input buffer and thus stabilizes the operation of the semiconductor device. The semiconductor integrated circuit includes an input potential detection unit outputting a detection signal in response to a level of an input signal, an input buffer buffering the input signal, and an output path control unit that receives the output signal of the input buffer and the detection signal of the input potential detection unit and outputs an output driving signal in response to the level of the detection signal.

Semiconductor device having input circuit with output path control unit

A semiconductor device stabilizes an operation of an input buffer. A semiconductor device includes an input potential detection unit outputting a detection signal in response to a level of an input signal. An input buffer buffers the input signal by performing a differential amplifying operation through a first current sink unit. A second current sink unit, sharing an output with the input buffer, differentially amplifies the input signal of the input buffer in response to a level of the detection signal.

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Seoul, South Korea

Mi Hye Kim